Patents Assigned to Plasma Etch
  • Plasma etching reactor
    Patent number: 5082547
    Abstract: An improved plasma etching reactor of the type which has a vacuum chamber and which includes an electrostatic shield. The chamber has inner wall surfaces which are covered with a dielectric layer such as Teflon which in turn is covered on the inwardly facing surface thereof with a conductive layer such as aluminum. This provides a more uniform plasma reaction. The chamber is of the type which has alternating charged and ground electrodes.
    Type: Grant
    Filed: February 1, 1991
    Date of Patent: January 21, 1992
    Assignee: Plasma Etch
    Inventor: Gregory W. DeLarge