Patents Assigned to Plasma Physics Corp.
  • Method of forming semiconductor materials and barriers
    Patent number: 5543634
    Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
    Type: Grant
    Filed: June 2, 1994
    Date of Patent: August 6, 1996
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman
  • Method of forming semiconducting materials and barriers using a multiple chamber arrangement
    Patent number: 5470784
    Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
    Type: Grant
    Filed: September 23, 1992
    Date of Patent: November 28, 1995
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman
  • Method of forming semiconducting materials and barriers using a dual enclosure apparatus
    Patent number: 5187115
    Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: February 16, 1993
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman
  • Method of forming semiconductor materials and barriers
    Patent number: 5073804
    Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
    Type: Grant
    Filed: August 16, 1988
    Date of Patent: December 17, 1991
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman
  • Method of forming semiconducting materials and barriers
    Patent number: 5049523
    Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
    Type: Grant
    Filed: August 16, 1989
    Date of Patent: September 17, 1991
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman
  • Glow discharge method and apparatus and photoreceptor devices made therewith
    Patent number: 4741801
    Abstract: Glow discharge method and apparatus useful for coating photoresponsive devices in the form of drums and plates are described. Improved photoresponsive devices using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are also described.
    Type: Grant
    Filed: February 7, 1986
    Date of Patent: May 3, 1988
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman
  • Method of forming semiconducting materials and barriers
    Patent number: 4328258
    Abstract: In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
    Type: Grant
    Filed: October 24, 1979
    Date of Patent: May 4, 1982
    Assignee: Plasma Physics Corp.
    Inventor: John H. Coleman