Abstract: According to the present invention, a plasma processing apparatus for performing surface processing of a substrate by means of plasma discharge is provided comprising: a processing chambers 10R and 10L for performing surface processing of a substrate W; a load-lock chamber 11 which is arranged in between these processing chambers 10R and 10L; and transporting mechanisms which are capable of performing substrate transport between load-lock chamber 11 and processing chamber 10R, and between load-lock chamber 11 and processing chamber 10L; these transporting mechanisms are freely movable in a reciprocating manner in the direction in which processing chamber 10R, load-lock chamber 11, and processing chamber 10L are contiguously arranged; wherein, upper wing 20U and lower wing 20L, which are spaced apart in a vertical manner with respect to each other, are provided as the aforementioned transporting mechanisms.

Abstract: The plasma processing apparatus of the present invention increases the throughput of plasma processing. This objective is achieved by a composition which comprises a processing chamber (10) for performing surface processing of substrates (W) by means of a plasma discharge, load-lock chambers (20R) and (20L) whereto passage from the processing chamber (10) is possible through slots (11R) and (11L) formed in a wall portion (10a) of the processing chamber (10), a gate element (30) which opens and closes the slots (11R) and (11L) from within the processing chamber 10, and transport element(s) for transporting substrates (W) between the processing chamber (10) and the load-lock chambers (20R) and (20L).