Abstract: A method for controlling a variable parameter during a processing of a semiconductor device includes selecting a beginning and an ending value; selecting a function governing how the parameter is to be transitioned; initializing the parameter to the beginning value; and automatically transitioning the parameter according to the selected function. Another method includes selecting a criterion; determining a beginning value; receiving an input; determining from the input whether the parameter needs to be modified; and modifying the parameter. The methods can control the parameters of a Bosch process such that the steps of etching and plasma deposition are performed alternatingly while keeping the transition points arbitrarily small and providing increased control over the process and the resulting trench wall profile. The method applies to other types of semiconductor processing, including without limitation, other deposition and etching applications or processes.

Abstract: A sputtering system and magnet array for depositing metal and metal-reactive gas coatings onto a substrate. The magnet array is designed for use in a rotating magnetron. The magnet array includes a plurality of magnets disposed on a plate. The plurality of magnets is arranged such that a closed-loop magnetic path is formed. The shape of the magnetic path is a double-lobe structure that includes first and second lobes that are symmetric to one another about an axis in the plane of the plate that intersects the center of rotation of the plate. The magnets are arranged in several rows. A first row of magnets has a double-lobe structure that corresponds to the first and second lobes of the magnetic path. Second and third rows of magnets are arranged in the shape of rings inside the first and second lobes of the magnetic path magnetic path. The lobe structure of the magnetic path can be circular or elliptical in shape.

Abstract: A method of anisotropically plasma etching a silicon on insulator substrate wherein undercutting is substantially eliminated by utilizing as a finishing etch step a reactive ion etching process wherein the ion density is reduced in order to limit ion charging through different size recesses in order to uniformly etch in a vertical direction.

Abstract: A transfer apparatus for conveying a semiconductor wafer between a first location and a second location comprises transfer arm means including first and second elongated arm members each having first and second ends. The first end of the first arm member is pivotally supported at a point generally midway between the two locations and the first end of the second arm member is pivotally supported by the first arm member proximate to the second end thereof. The first and second arm members are of sufficient length and are cooperative to pivot to at least a first position in which at least a part of the second arm extends to the first location, a second position in which at least a part of the second arm member extends to the second location and an intermediate position. Arm member actuator means are provided for pivoting the first and second arm members to the first, second and intermediate positions.