Patents Assigned to Plasmart Co. Ltd.
  • Patent number: 8120259
    Abstract: Provided are an impedance matching method and a matching system performing the same. The method includes: measuring an electrical characteristic of the power transmission line; determining a pulse mode of the power source; extracting a control parameter for impedance matching from the electrical characteristic of the power transmission line; and controlling the matching system through the control parameter, wherein the matching system is controlled differently according to the pulse mode.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: February 21, 2012
    Assignee: Plasmart Co., Ltd.
    Inventors: Jae-Hyun Kim, Sang-Won Lee, Yong-Gwan Lee
  • Patent number: 8053991
    Abstract: Provided are an impedance matching method and a matching system performing the same. The method includes: measuring an electrical characteristic of the power transmission line including the matching system and the load; extracting a control parameter for impedance matching from the electrical characteristic of the power transmission line; and controlling the matching system by using the control parameter. The extracting of the control parameter comprises utilizing an analytic coordinate system that quantitatively relates the electrical characteristic of the matching system to the electrical characteristic of the power transmission line.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: November 8, 2011
    Assignee: Plasmart Co., Ltd.
    Inventors: Jae-Hyun Kim, Sang-Won Lee, Yong-Gwan Lee
  • Patent number: 7088047
    Abstract: An inductively coupled plasma generator having a lower aspect ratio reaction gas, comprising a chamber having a gas inlet through which a reaction gas is supplied, a vacuum pump for maintaining the inside of the chamber vacuum and a gas outlet for exhausting the reaction gas after completion of the reaction, a chuck for mounting a target material to be processed inside the chamber, and an antenna to which high-frequency power is applied, the antenna provided at the upper and lateral portions of the chamber, wherein the antenna has parallel antenna elements in which a discharge of a high frequency can be allowed and impedance is low to ensure a low electron temperature, the antenna is disposed such that a powered end of each of the antenna elements and a ground end of each of the antenna elements opposite to the powered end are symmetrical in view of the center of an imaginary circle formed by the antenna to establish rotation symmetry of plasma density profiles, the antenna elements are twisted in a helical m
    Type: Grant
    Filed: January 26, 2005
    Date of Patent: August 8, 2006
    Assignee: Plasmart Co. Ltd.
    Inventors: Yong-Kwan Lee, Won-Bong Jung, Sang-Won Lee, Sae-Hoon Uhm, Dong-Seok Lee
  • Patent number: 7079085
    Abstract: An antenna structure for an inductively coupled plasma generator suitable for processing large-diameter wafers or large, flat-panel display devices by making a plasma density distribution uniform and symmetrical with respect to a rotating direction inside a circular or rectangular chamber in which a wafer is processed. In the antenna structure having a powered end to which RF power is applied and a ground end connected to the ground, at least two loop antenna elements are disposed electrically in parallel with each other, the powered ends and ground ends of the respective antennas are disposed symmetrically with respect to the center of the antennas, and the antennas crossing each other such that the powered ends and ground ends thereof are disposed at a part far from a chamber and central parts thereof are disposed at a part close to the chamber.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: July 18, 2006
    Assignee: Plasmart Co. Ltd.
    Inventors: Young-Kwan Lee, Sang-Won Lee, Sae-Hoon Uhm