Patents Assigned to PlasmaSi, Inc.
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Publication number: 20140220262Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: April 15, 2014Publication date: August 7, 2014Applicant: PLASMASI, INC.Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20140212601Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: ApplicationFiled: April 14, 2014Publication date: July 31, 2014Applicant: PlasmaSi, Inc.Inventors: Stephen E. Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Patent number: 8765232Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: GrantFiled: January 10, 2012Date of Patent: July 1, 2014Assignee: PlasmaSi, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski
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Patent number: 8697197Abstract: Apparatus and method for plasma-based processing well suited for deposition, etching, or treatment of semiconductor, conductor or insulating films. Plasma generating units include one or more elongated electrodes on the processing side of a substrate and a neutral electrode proximate the opposite side of the substrate. Gases may be injected proximate a powered electrode which break down electrically and produce activated species that flow toward the substrate area. This gas then flows into an extended process region between powered electrodes and substrate, providing controlled and continuous reactivity with the substrate at high rates with efficient utilization of reactant feedstock. Gases are exhausted via passages between powered electrodes or electrode and divider.Type: GrantFiled: July 8, 2010Date of Patent: April 15, 2014Assignee: Plasmasi, Inc.Inventors: Stephen Edward Savas, Carl Galewski, Allan B. Wiesnoski, Sai Mantripragada, Sooyun Joh
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Publication number: 20120225218Abstract: The disclosed invention includes apparatus and methods that may be used for plasma-based deposition of thin layers of material on separate or continuous web substrates at very low temperatures with very low defect density. It achieves superior control of gas phase chemistry by controlling the sequence of introduction of gaseous components. It also has substantially independent control over the rate of chemical processes in the gas and of the amount of power and energy of ion bombardment. Such control enables high quality single and multi-layer films to be deposited cost effectively and uniformly over larger areas under very low temperature conditions.Type: ApplicationFiled: January 10, 2012Publication date: September 6, 2012Applicant: PlasmaSi, Inc.Inventors: Stephen Edward Savas, Sai Mantripragada, Sooyun Joh, Allan B. Wiesnoski, Carl Galewski