Abstract: A method of processing a semiconductor wafer sliced from a single-crystal ingot and having front and back surfaces and a peripheral edge comprises the step of plasma jet etching the wafer to reduce the sub-surface wafer damage. The method further comprises high-gloss etching the wafer by subjecting the wafer to a high-gloss etchant that smooths the wafer such that surface roughness and nonspecularly reflected light are reduced. Plasma assisted chemical etching (PACE) is performed on the wafer to improve the flatness and the thickness uniformity of the wafer. The wafer is final polished to further reduce surface roughness and nonspecularly reflected light.

Abstract: A novel gas discharge apparatus for use in a plasma etching system is disclosed. Several components of the gas discharge apparatus including the annular outer chimney, annular outer chimney clamp and annular insulator collar are modified to allow increased egress of particulate matter generated by the etching process away from the substrate being figured. This increased egress results in a significant reduction of contaminants contacting the substrate surface.