Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: A method of forming an non-oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an inert gas into the process chamber, ionizing the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the non-oxide thin film on the substrate from the negatively charged ions.

Abstract: The specification and drawings describe and show embodiments of the present invention of an apparatus and method for emitting a cesium vapor. More specifically, the cesium vapor emitter of the present invention includes a housing having at least one chamber therein in fluid communication with at least one outlet, a reservoir containing cesium disposed in the chamber, a filter located between the cesium and the outlet, and a stopper securing the cesium reservoir in the chamber, so that the cesium vapor is emitted through the outlet.

Abstract: A method of forming an oxide thin film includes introducing a work function reducing agent onto a surface of a sputter target facing into a substrate in a process chamber, providing an oxygen gas and an inert gas into the process chamber, ionizing the oxygen gas and the inert gas, thereby generating a plurality of electrons, disintegrating a plurality of negatively charged ions from the sputter target, and forming the oxide thin film on the substrate from the negatively charged ions reacted with the ionized oxygen gas.

Abstract: The present invention discloses an apparatus and a method of forming a thin film from negatively charged sputtered ions. More specifically, a sputter deposition apparatus for forming a thin film on a substrate includes at least one sputter target comprised of a material for the thin film, an ion gun emitting a neutralized ion beam towards the sputter target, a sputter gas source supplying a sputter gas into the ion gun, and a cesium vapor emitter inducing a plurality of negatively ionized sputtered particles from the sputter target and located in close proximity to the sputter target to introduce cesium vapor onto a reaction surface, wherein the cesium vapor emitter includes a feeding manifold having a plurality of apertures therein, a reservoir coupled to the feeding manifold and filled with a cesium slurry, and an on/off valve controlling an amount of the cesium vapor from the reservoir.

Abstract: A plasma treatment apparatus for a workpiece includes a metal electrode, a capillary dielectric having first and second sides and coupled to the metal electrode through the first side, wherein the capillary dielectric has at least one capillary, a shield body surrounding the metal electrode and the first side of the capillary dielectric, wherein the shield body has first and second end portions, and a gas supplier providing gas to the metal electrode.

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: A method and an apparatus for treating a workpiece using a plasma are disclosed in the present invention. In treating a workpiece using a plasma, the apparatus includes at least one pin electrode for receiving a power source, a dielectric body having first and second sides, wherein the first side is coupled to the pin electrode and the second side has at least one capillary extending to a direction of the first side of the dielectric body, and each capillary is substantially aligned with each pin electrode, and a counter electrode electrically coupled to the pin electrode for generating the plasma from each capillary.

Abstract: The specification and drawings describe and show embodiments of the present invention in the cesium vapor emitter and the method of fabricating the same. More specifically, the cesium vapor emitter of the present invention includes a housing having at least one chamber therein and at least one channel, wherein the channel has a size wide enough to introduce a desired amount of cesium vapor, a cesium reservoir placed in the chamber, wherein the cesium reservoir is filled with a cesium pellet and a plug located between the cesium pellet and the channel, thereby emitting the cesium vapor from the cesium pellet through the channel, and a stopper securing the cesium reservoir in the chamber, so that the cesium vapor is emitted through the channel.

Abstract: A plasma display panel having a trench discharge cell and a method of fabricating the same are disclosed in the present invention. The plasma display panel having a plurality of trench discharge cells includes a transparent substrate having at least one isolated trench in a discharge cell, one or more sustain electrodes in each trench and extended to outside of the trench, one or more bus electrodes on the sustain electrode, and a dielectric layer formed on an entire surface of the transparent substrate including the sustain electrodes, the bus electrodes, and the trench, wherein the dielectric layer has a first portion on the bottom of the trench, a second portion outside the trench of the substrate, and a third portion on side-walls of the trench, and wherein the trench has a first length perpendicular to a direction of the sustain electrodes and a second length parallel to a direction of the sustain electrodes and the first length is greater than the second length.

Abstract: A negative ion source is disclosed which includes an electrode, a target having a more negative electrical potential than the electrode, a supply of electrical energy for generating a discharge between the electrode and the target, and at least one magnet positioned so as to confine electrons, generated as a result of said discharge, in close proximity to a first surface of the target. The negative ion source further includes a delivery system for delivering cesium to a second surface of the target, and a distribution chamber interposed between the delivery system and the target for uniformly distributing cesium on the second surface of said target. The cesium diffuses through openings in the target from the first surface to the second surface. The negative ion source may comprise a conventional magnetron sputter source that has been retrofitted to include a cesium distribution system.

Abstract: The present invention discloses an ultraviolet light source driven by a capillary discharge plasma and a method for surface treatment using the same. More specifically, an ultraviolet light source driven by a capillary discharge plasma includes an AC power supply as a power source, at least one first electrode connected to the power source, a dielectric body having at least one capillary discharge site therein and enclosing at least a portion of the first electrode, wherein each capillary discharge site is substantially aligned with each first electrode, so that the first electrode is exposed by the capillary site, at least one second electrode electrically coupled to the first electrode, a gas tight chamber enclosing the first and second electrodes and the dielectric body including a working gas, and a window attached to the chamber substantially passing only ultraviolet light from a capillary discharge plasma.

Abstract: A method and an apparatus for treating a workpiece using a plasma discharge are disclosed in the present invention. In treating a workpiece using a plasma discharge, the apparatus includes at least one plate electrode electrically coupled to a power source, a dielectric body having first and second sides, wherein the first side is coupled to the at least one plate electrode and the second side has at least one capillary extending substantially therethrough in a direction of the first side of the dielectric body, and a counter electrode electrically coupled to the power source.

Abstract: A deposition system includes at least one first load lock chamber, at least one deposition chamber attached to the first load lock chamber, the at least one deposition chamber having a plurality of deposition sources disposed circumferentially about sidewalls of the deposition chamber, at least one second load lock chamber attached to the deposition chamber, a plurality of gas inlet ports and vacuum line ports disposed on each of the first and second load lock chambers and the deposition chamber, and a plurality of rotatable deposition pallets, at least one deposition pallet is disposed within the deposition chamber and at least one deposition pallet is disposed in one of the first and second load lock chambers, wherein the at least one deposition pallet disposed in one of the first and second load lock chambers laterally shifts into the deposition chamber when the at least one deposition pallet disposed in the deposition chamber laterally shifts from the deposition chamber into another one of the first and s

Abstract: A focused magnetron sputter system includes a processing chamber, a plurality of sputter sources arranged within the processing chamber, a substrate holder disposed above the plurality of sputter sources, a rotational shutter arranged between a substrate and the plurality of sputter sources for selectively forming a coating on the substrate, and a power supply connected to the substrate holder for supplying a substrate bias.

Abstract: The present invention discloses an area lamp apparatus, and more specifically, a flat light source wherein a plurality of fluorescent lamps are formed within a single glass substrate. The area lamp apparatus includes front and rear substrates facing into each other and at least a portion of the front and rear substrates contacting each other, a plurality of groves in at least one of the front and rear substrates to form a plurality of discharge channels, a fluorescent layer on surfaces of the groves, a pair of side substrates attached to the front and rear substrates for sealing the discharge channels, and a pair of side electrodes on the side substrates. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: The specification and drawings describe and show embodiments of the present invention in the form of a slim cathode ray tube and a method of fabricating the same. More specifically, a slim cathode ray tube includes a vacuum tight envelope having front and back panels, the front panel including a fluorescent screen and a shadow mask thereon, at least one emitter plate on the back panel and having a plurality of planar electron emitters each generating an electron beam onto the fluorescent screen through the shadow mask, wherein the planar electron emitters have an electron emission surface that has a form of a conical shape, and an acceleration grid over the planar electron emitters and accelerating the electron beam and directing the accelerated electron beam onto the fluorescent screen. It is emphasized that this abstract is provided to comply with the rule requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.

Abstract: A method for forming an indium tin oxide thin film on a substrate in the present invention includes the steps of introducing a mixture of an inert gas and a low electron affinity element in close proximity to a target as a primary sputter ion beam source, providing an oxygen gas between the target and the substrate, applying an electrical energy to the target to ionize the mixture, confining electrons generated in the ionization in close proximity to a surface of the target facing towards the substrate, disintegrating negatively charged ions from the target, and forming the indium tin oxide thin film on the substrate.

Abstract: The present invention provides a capillary electrode discharge plasma display panel device and method of fabricating the same including first and second substrates a first electrode on the first substrate, a second electrode on the second substrate, a pair of barrier ribs connecting the first and second substrates, a discharge charge chamber between the first and second substrates defined by the barrier ribs, and a dielectric layer on the first substrate including the first electrode, the dielectric layer having a capillary to provide a steady state UV emission in the discharge chamber.

Abstract: The present invention provides a capillary electrode discharge plasma display panel device and method of fabricating the same including first and second substrates a first electrode on the first substrate, a second electrode on the second substrate, a pair of barrier ribs connecting the first and second substrates, a discharge charge chamber between the first and second substrates defined by the barrier ribs, and a dielectric layer on the first substrate including the first electrode, the dielectric layer having a capillary to provide a steady state UV emission in the discharge chamber.