Patents Assigned to PLASMIONIQUE INC.
  • Ferroelectric tunnel junction and method of fabrication thereof
    Patent number: 10056394
    Abstract: A method for fabricating a ferroelectric tunnel junction, comprising growing a hafnium zirconium oxide film barrier layer by sputtering in the presence of oxygen at a temperature of at most 425° C., on a conductive material as a bottom electrode, and depositing a conductive material as a top electrode.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: August 21, 2018
    Assignees: INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE, PLASMIONIQUE INC.
    Inventors: Andreas Ruediger, Fabian Ambriz-Vargas, Gitanjali Kolhatkar, Reji Thomas, Azza Hadj Youssef, Rafik Nouar, Andranik Sarkissian, Marc-André Gauthier