Abstract: The present invention relates to a semiconductor component (1) having a photosensitive semiconductor layer (2), wherein the photosensitive semiconductor layer (2) is doped with a first doping density (D1) of a first conduction type which brings about an effective conversion of electromagnetic radiation penetrating into the semiconductor layer (2) into electrical charge carriers, having at least two modulation gates (4A, 4B) which are arranged at a mutual spacing and are each formed by a trench gate extending from a surface (3) of the semiconductor layer (2) and perpendicular to this surface (3) into the semiconductor layer (2), and having at least two readout diodes (5A, 5B) arranged at a mutual spacing and near the surface (3) between the two modulation gates (4A, 4B).