Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).
Type:
Grant
Filed:
June 18, 2012
Date of Patent:
September 22, 2015
Assignees:
PNDetector GmbH, PNSensor GmbH
Inventors:
Gerhard Lutz, Heike Soltau, Adrian Niculae
Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).
Type:
Application
Filed:
June 18, 2012
Publication date:
November 13, 2014
Applicants:
PNSENSOR GMBH, PNDETECTOR GMBH
Inventors:
Gerhard Lutz, Heike Soltau, Adrian Niculae