Abstract: An X-ray camera includes a camera housing, an image pickup element which is sensitive at least for X-rays, and an X-ray objective. The X-ray objective lens has a capillary structure and the image pickup element is constructed as a two-dimensional pixilated semiconductor sensor for simultaneous spatial, energy and time resolution.

Abstract: The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11). (FIG.

Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).

Abstract: The invention relates to a semiconductor drift detector for detecting radiation, comprising a semiconductor substrate (HS), in which signal charge carriers are generated during operation, to be precise by incident photons (h·f) having a specific photon energy, more particularly in the form of X-ray fluorescent radiation, and/or by incident electrons (?), having a specific signal charge carrier current, more particularly in the form of back-scattered electrons (?), and comprising a read-out anode (A) for generating an electrical output signal in a manner dependent on the signal charge carriers, and comprising an erase contact (RC) for erasing the signal charge carriers that have accumulated in the semiconductor substrate (HS).

Abstract: The invention concerns a radiation entry window (10) for a radiation detector (2), in particular for a semiconductor drift detector (2), with a flat window element (11), which is at least partially permeable for the radiation to be detected by the radiation detector (2), as well as with a window frame (12), which laterally frames the window element (11), wherein the window frame (12) consists of a semiconductor material and is considerably thicker than the window element (11).

Abstract: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside t

Abstract: An X-ray camera includes a camera housing, an image pickup element which is sensitive at least for X-rays, and an X-ray objective. The X-ray objective lens has a capillary structure and the image pickup element is constructed as a two-dimensional pixilated semiconductor sensor for simultaneous spatial, energy and time resolution.

Abstract: The invention relates to an avalanche photodiode (1) for detecting radiation, including a semiconductor substrate (11), an upper diode layer (15), an oppositely doped, laterally delimited lower diode layer (16), an avalanche region situated between the upper diode layer (15) and the lower diode layer (16), wherein the radiation to be detected triggers an avalanche breakdown in the avalanche region, and also including a contact-making layer (12) at the underside (10) of the semiconductor substrate (11), a laterally delimited quenching resistance layer (18) arranged in the semiconductor substrate (11) between the lower diode layer (16) and the contact-making layer (12), wherein the quenching resistance layer (18) quenches the radiation-generated avalanche breakdown in the avalanche region, and also including a depletion electrode (15) arranged laterally alongside the laterally delimited lower diode layer (16), such that the depletion electrode (15) depletes the semiconductor substrate (11) laterally alongside t