Abstract: In one aspect, the present disclosure provides a compound of the formula: In another aspect, the present disclosure also provides methods of preparing the compound disclosed herein. In another aspect, the present disclosure also provides pharmaceutical compositions and methods of use of the compound disclosed herein. Additionally, methods of treating cancer with the compound disclosed herein are described.

Abstract: The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based ?i-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based ?i-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based ?i-V group compound semiconductor layer on the p-type GaN-based ?i-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening.

Abstract: Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.

Abstract: Inverted cucurbituril compounds having at least one pair of hydrogen atoms protruding into an internal molecular cavity thereof.

Abstract: The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based ?i-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based ?i-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based ?i-V group compound semiconductor layer on the p-type GaN-based ?i-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening.

Abstract: Disclosed are fusion proteins comprising a biologically active molecule and an immunoglobulin (Ig) Fc domain which is linked to the biologically active molecule. The Fc domain is a hybrid human Fc domain of (i) IgG1, IgG2 or IgG4 or (ii) IgG4 and IgD. The hybrid Fc is useful as a carrier of biologically active molecules.

Abstract: Disclosed are fusion proteins comprising a biologically active molecule and an immunoglobulin (Ig) Fc domain which is linked to the biologically active molecule. The Fc domain is a hybrid human Fc domain of (i) IgG1, IgG2 or IgG4 or (ii) IgG4 and IgD. The hybrid Fc is useful as a carrier of biologically active molecules.

Abstract: Provided is a bone filling complex and method of preparing the same. The bone filling complex includes a matrix including a hydrogel-type hyaluronic acid derivative; and a bone derivative filling the matrix For example, the bone filling complex can be used to regenerate an injured alveolar bone.

Abstract: Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.

Abstract: Ultralong carbon nanotubes can be formed by placing a secondary chamber within a reactor chamber to restrict a flow to provide a laminar flow. Inner shells can be successively extracted from multi-walled carbon nanotubes (MWNTs) such as by applying a lateral force to an elongated tubular sidewall at a location between its two ends. The extracted shells can have varying electrical and mechanical properties that can be used to create useful materials, electrical devices, and mechanical devices.

Abstract: Disclosed herein is a method of constructing an environmental map using sonar sensors. The method includes the steps of checking whether conflict cells have occurred using input sonar sensor data; if conflict cells have occurred, selecting incorrect data and eliminating the conflict cells using sound pressure comparison until the conflict cells do not occur any longer; and once the elimination has completed, preparing a grid map using a Maximum Approximated Likelihood (MAL) approach. Inconsistency in data occurs when multiple pieces of sensor data overlap each other, the conflict cells are cells that experience inconsistency over an entire arc region, and candidates for the incorrect sonar sensor data are obtained when the conflict cells occur.

Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.

Abstract: Disclosed herein are a nanocrystal-polydimethylsiloxane composite and a method for preparing the same. More specifically, provided are a nanocrystal-polydimethylsiloxane composite in which one or more polydimethylsiloxane derivatives having urea cross-links are bound to the surface of a nanocrystal, and a method for preparing the same. The nanocrystal-polydimethylsiloxane composite comprises optically transparent polydimethylsiloxane with remarkably high durability, thus imparting improved luminescence efficiency and product reliability to various electronic devices, when applied as a luminescent material to the electronic devices.

Abstract: Disclosed are fusion proteins comprising a biologically active molecule and an immunoglobulin (Ig) Fc domain which is linked to the biologically active molecule. The Fc domain is a hybrid human Fc domain of (i) IgG1, IgG2 or IgG4 or (ii) IgG4 and IgD. The hybrid Fc is useful as a carrier of biologically active molecules.

Abstract: Disclosed are fusion proteins comprising a biologically active molecule and an immunoglobulin (Ig) Fc domain which is linked to the biologically active molecule. The Fc domain is a hybrid human Fc domain of (i) IgG1, IgG2 or IgG4 or (ii) IgG4 and IgD. The hybrid Fc is useful as a carrier of biologically active molecules.

Abstract: A clamping device includes an oblique device and a unidirectional load control plate disposed on the outside of the fuel cell stack, not on the inside of the fuel cell stack. The device can automatically compensating the surface pressure in the fuel cell stack to be maintained constant, and provide a large clamping load with a small force using the load of the fuel cell stack.

Abstract: A composite photocatalyst includes a semiconducting core and a nanoscale particle disposed on a surface of the semiconducting core, wherein the nanoscale particle is an electron carrier, and wherein the photocatalyst is sensitive to visible light irradiation.

Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.

Abstract: A clamping device includes an oblique device and a unidirectional load control plate disposed on the outside of the fuel cell stack, not on the inside of the fuel cell stack. The device can automatically compensating the surface pressure in the fuel cell stack to be maintained constant, and provide a large clamping load with a small force using the load of the fuel cell stack.

Abstract: A radiation detector has an electron emitter that includes a coated nanostructure on a support. The nanostructure can include a plurality of nanoneedles. A nanoneedle is a shaft tapering from a base portion toward a tip portion. The tip portion has a diameter between about 1 nm to about 50 nm and the base portion has a diameter between about 20 nm to about 300 nm. Each shaft has a length between about 100 nm to about 3,000 nm and an aspect ratio larger than 10. A coating covers at least the tip portions of the shafts. The coating exhibits negative electron affinity and is capable of emitting secondary electrons upon being irradiated by radiation. The nanostructure can also include carbon nanotubes (CNTs) coated with a material selected from the group of aluminum nitride (AlN), gallium nitride (GaN), and zinc oxide (ZnO).