Abstract: The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based ?i-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based ?i-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based ?i-V group compound semiconductor layer on the p-type GaN-based ?i-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening.

Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.

Abstract: Disclosed herein are a nanocrystal-polydimethylsiloxane composite and a method for preparing the same. More specifically, provided are a nanocrystal-polydimethylsiloxane composite in which one or more polydimethylsiloxane derivatives having urea cross-links are bound to the surface of a nanocrystal, and a method for preparing the same. The nanocrystal-polydimethylsiloxane composite comprises optically transparent polydimethylsiloxane with remarkably high durability, thus imparting improved luminescence efficiency and product reliability to various electronic devices, when applied as a luminescent material to the electronic devices.

Abstract: Disclosed herein are a nanocrystal-polydimethylsiloxane composite and a method for preparing the same. More specifically, provided are a nanocrystal-polydimethylsiloxane composite in which one or more polydimethylsiloxane derivatives having urea cross-links are bound to the surface of a nanocrystal, and a method for preparing the same. The nanocrystal-polydimethylsiloxane composite comprises optically transparent polydimethylsiloxane with remarkably high durability, thus imparting improved luminescence efficiency and product reliability to various electronic devices, when applied as a luminescent material to the electronic devices.

Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.