Patents Assigned to Poongsan Microtec Co., Ltd.
  • Method of fabricating flash memory
    Patent number: 7528039
    Abstract: A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: May 5, 2009
    Assignee: Poongsan Microtec Co., Ltd.
    Inventors: Hyun-Sang Hwang, Ho-Kyung Park, Man Jang, Min-Seok Jo
  • METHOD OF FABRICATING FLASH MEMORY
    Publication number: 20080166865
    Abstract: A method of fabricating a flash memory is provided. The method includes forming a tunneling insulating film, a charge storage film, and a blocking insulating film on a semiconductor substrate; performing High Temperature (HT) anneal for the resultant semiconductor substrate; and performing Low Temperature (LT) wet vapor anneal for the resultant semiconductor substrate.
    Type: Application
    Filed: January 28, 2008
    Publication date: July 10, 2008
    Applicant: Poongsan Microtec Co. Ltd. (Status: Corporation )
    Inventors: Hyun-Sang Hwang, Ho-Kyung Park, Man Jang, Min-Seok Jo