Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.
Type:
Grant
Filed:
July 3, 2013
Date of Patent:
January 20, 2015
Assignee:
Poongsan Microtec Corporation
Inventors:
Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.
Type:
Grant
Filed:
February 4, 2009
Date of Patent:
July 9, 2013
Assignee:
Poongsan Microtec Corporation
Inventors:
Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.
Type:
Application
Filed:
February 4, 2009
Publication date:
June 11, 2009
Applicant:
POONGSAN MICROTEC CORPORATION
Inventors:
Sang-Shin Kim, Manuel Scott Rivera, Suk-Dong Hong
Abstract: Novel methods and apparatuses for annealing semiconductor devices in a high pressure gas environment. According to an embodiment, the annealing vessel has a dual chamber structure, and potentially toxic, flammable, or otherwise reactive gas is confined in an inner chamber which is protected by pressures of inert gas contained in the outer chamber. The incoming gas delivery system and exhaust gas venting system are likewise protected by various methods. Embodiments of the present invention can be used, for example, for high-K gate dielectric anneal, post metallization sintering anneal, and forming gas anneal in the semiconductor manufacturing process.
Type:
Application
Filed:
February 10, 2006
Publication date:
August 16, 2007
Applicant:
POONGSAN MICROTEC CORPORATION
Inventors:
Sang-Shin Kim, Manuel Rivera, Suk-Dong Hong