Patents Assigned to Poshtech Academy-Industry Foundation
  • Patent number: 9667241
    Abstract: A leakage current-based delay circuit is provided, wherein the delay circuit may include a first transistor circuit and a second transistor circuit, each transistor circuit may include a p-type transistor, an n-type transistor, an n-node between a drain node of the p-type transistor and a gate node of the n-type transistor, and a p-node between a gate node of the p-type transistor and a drain node of the n-type transistor. The p-node of the second transistor circuit may be charged based on a power source voltage through the first transistor circuit during a first time interval of an input signal, and the n-node of the second transistor circuit may be discharged based on a ground voltage through the first transistor circuit during the first time interval.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: May 30, 2017
    Assignees: Samsung Electronics Co., Ltd., Poshtech Academy-Industry Foundation
    Inventors: Jaesup Lee, Tae-Young Chung, Bum-Man Kim, Dae-Chul Jeong