Patents Assigned to Postech Foundation (KR)
  • Patent number: 6171958
    Abstract: A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.
    Type: Grant
    Filed: January 14, 1998
    Date of Patent: January 9, 2001
    Assignee: Postech Foundation (KR)
    Inventors: Shi Woo Rhee, Ju Young Yun