Patents Assigned to Postech Foundation
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Publication number: 20040035047Abstract: Disclosed herein is a biological method for aerobically treating whey using mushroom mycelia wherein the whey can be biologically treated at a disposal rate comparable to conventional methods. According to the method, since environmentally unfriendly sludge is not discharged, post-treatment operations in connection with the disposal of sludge can be simplified. Therefore, the method can lower environmental costs and further enables the economical cultivation of mushroom mycelia. Furthermore, the method has an advantage in terms of resource recycling.Type: ApplicationFiled: August 18, 2003Publication date: February 26, 2004Applicants: ENVITECH, INC., POSTECH FOUNDATIONInventors: Seokhwan Hwang, Hwan-Young Lee
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Patent number: 6617929Abstract: Quarter wave transformers are connected to final outputs of a carrier amplifier and a peaking amplifier, which are coupled in parallel to each other, so as to induce a Doherty operation of a microwave Doherty amplifier. Load matching circuits for obtaining a microwave output matching are connected to output terminals of the carrier amplifier and the peaking amplifier. A phase tuning component is positioned behind the load matching circuit. Accordingly, a matching state can be maintained without being changed at a high power level but can be adjusted depending on phase variations at a low power level to attain efficiency enhancements and optimum linearity.Type: GrantFiled: February 19, 2002Date of Patent: September 9, 2003Assignee: Postech FoundationInventors: Bumman Kim, Youngoo Yang, Jaehyok Yi, Young Yun Woo
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Publication number: 20030137324Abstract: A receiver performs on data to clock skew compensation by compensating ISI between signals, the ISI being caused by a bandwidth limitation generated in case of chip-to-chip communications in a digital system. A problem of an attenuation of a high frequency signal may occur due to an attenuation in a channel in case of a transmission of a signal at a high speed in the digital system. Therefore there is a limitation in transmitting data at a high speed. The receiver provides a circuit for applying an equalizing technology at the terminal of the receiver. And by compensating for the attenuation of a high frequency component of the signal by using the circuit, the transmission of a signal at a high speed is realized by over-sampling the signal and compensating the data to clock skew.Type: ApplicationFiled: January 22, 2003Publication date: July 24, 2003Applicant: POSTECH FOUNDATIONInventors: Hong-June Park, Young-Soo Sohn
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Patent number: 6593067Abstract: A method for manufacturing a microstructure by using an X-ray includes the steps of selectively exposing a portion of a photosensitive material to the high energy light source, the selectively exposing step being carried out by using a photomask for defining a pattern of the microstructure and performing a heat-treatment for melting and deforming only an upper portion of the exposed portion of the photosensitive material, the upper portion of the exposed portion of the photosensitive material being exposed at an energy level between about 1 kJ/cm3 and about 20 kJ/cm3, when being exposed to the X-ray.Type: GrantFiled: February 5, 2002Date of Patent: July 15, 2003Assignee: Postech FoundationInventors: Seung Seob Lee, Sung-Keun Lee, Kwang-Cheol Lee
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Publication number: 20030064698Abstract: A mixer comprises an LO (Local Oscillator) switching circuit for switching in response to an LO signal, a driver amplifier driven in response to an RF signal, an IF generator for generating an IF signal by detecting a difference between the LO signal and the RF signal, a filter for detecting a nonlinear low frequency intermodulation component of the RF signal, a low frequency amplifier for amplifying the low frequency intermodulation component and inverting a phase of the low frequency intermodulation component and an intermodulation component feed-forwarding circuit for feed-forwarding the amplified low frequency intermodulation component to output terminals of the driver amplifier or the LO switching circuit whereby the low frequency intermodulation component can be removed. The mixer removes an intermodulation component of an input RF signal generated due to the nonlinear characteristic of an RF amplifier, thereby to improve the linearity of the mixer.Type: ApplicationFiled: October 2, 2001Publication date: April 3, 2003Applicant: Postech FoundationInventors: Bumman Kim, Younggoo Yang, Sungmin Ock
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Publication number: 20030042997Abstract: Air-dielectric sandwich structures for electrically tunable microwave devices provide two types of layered structures; one type comprising a first dielectric material, a second dielectric material, an air gap between the first and second dielectric materials and an electromechanical actuator for adjusting the width of the air gap by moving the first or second dielectric materials, and the other type comprising a dielectric material, a metal wall, an air gap between the dielectric material and the metal wall and an actuator for adjusting the width of the air gap by moving the dielectric material or the metal wall. The tunable microwave devices including the air-dielectric sandwich structure are elaborated such as a tunable dielectric resonator, a band stop and a band pass filter, a phase shifter and a phase array antenna.Type: ApplicationFiled: February 27, 2002Publication date: March 6, 2003Applicant: POSTECH FOUNDATIONInventors: Sunggi Baik, Minki Jeong, Beomjin Kim, Yuriy Poplavko, Yuriy Prokopenko
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Patent number: 6519271Abstract: A photonic quantum ring (PQR) laser diode with a plurality of laterally extending layers, one on top of another in an axial stack, comprises an active region sandwiched between an n type multi-layer distributed Bragg reflector (DBR) stack and a p type multi-layer DBR stack, wherein, along the circumference of said active region, 3 dimensional radiations are emitted with various wavelengths over a predetermined tuning range, as a function of slanted view angle with respect to the stack axis. The PQR laser shows an ultra-low threshold current of &mgr;A range, T½ dependence of the spectral peak shift and a square law behavior of threshold currents.Type: GrantFiled: October 14, 1998Date of Patent: February 11, 2003Assignee: Postech FoundationInventors: O'Dae Kwon, Jung Chak Ahn, Byung Hoon Park
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Publication number: 20030012332Abstract: A method for manufacturing a microstructure by using an X-ray includes the steps of selectively exposing a portion of a photosensitive material to the high energy light source, the selectively exposing step being carried out by using a photomask for defining a pattern of the microstructure and performing a heat-treatment for melting and deforming only an upper portion of the exposed portion of the photosensitive material, the upper portion of the exposed portion of the photosensitive material being exposed at an energy level between about 1 kJ/cm3 and about 20 kJ/cm3, when being exposed to the X-ray.Type: ApplicationFiled: February 5, 2002Publication date: January 16, 2003Applicant: POSTECH FOUNDATIONInventors: Seung Seob Lee, Sung-Keun Lee, Kwang-Cheol Lee
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Patent number: 6501824Abstract: An X-ray mask is integrated with a micro-actuator. The X-ray mask includes a mask portion, a mask holder portion, at least one elasticized supporter and a micro-actuator unit. The mask portion has a thin shuttle mass and an X-ray absorber attached on the shuttle mass. The mask holder portion is formed around the mask portion with a predetermined distance maintained therebetween. The elasticized supporter connects the mask portion and the mask holder portion elastically. The micro-actuator unit is prepared between the mask portion and the mask holder portion to precisely control a position of the mask portion when a voltage is applied.Type: GrantFiled: January 16, 2002Date of Patent: December 31, 2002Assignee: Postech FoundationInventors: Seung Seob Lee, Kwang-Cheol Lee, Sang Jun Moon
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Patent number: 6480078Abstract: A resonating apparatus includes a dielectric resonator on a dielectric supporting substrate, a fluid dielectric membrane which overspreads the dielectric resonator, and a microstrip line which is arranged in the fluid substrate membrane so that it is coupled with the dielectric resonator. The resonating apparatus reduces the conductivity loss by lengthening the distance between the dielectric supporting substrate in the higher layer and the microstrip line in the lower layer when it is used in a multi-layer circuit such as an MMIC. Further, the resonating apparatus increases the dielectric permittivity by using the dielectric resonator which has high dielectric permittivity as well as the fluid dielectric membrane. In this way, the resonating apparatus obtains high Q.Type: GrantFiled: August 20, 2001Date of Patent: November 12, 2002Assignee: Postech FoundationInventors: Bumman Kim, Junyoul Lim, Seonghan Ryu, Joung Hyun Yim
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Publication number: 20020135425Abstract: Quarter wave transformers are connected to final outputs of a carrier amplifier and a peaking amplifier, which are coupled in parallel to each other, so as to induce a Doherty operation of a microwave Doherty amplifier. Load matching circuits for obtaining a microwave output matching are connected to output terminals of the carrier amplifier and the peaking amplifier. A phase tuning component is positioned behind the load matching circuit. Accordingly, a matching state can be maintained without being changed at a high power level but can be adjusted depending on phase variations at a low power level to attain efficiency enhancements and optimum linearity.Type: ApplicationFiled: February 19, 2002Publication date: September 26, 2002Applicant: Postech FoundationInventors: Bumman Kim, Youngoo Yang, Jaehyok Yi, Young Yun Woo
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Patent number: 6274195Abstract: An organometallic complex of formula(I) having a low evaporation temperature can be used as a precursor for the MOCVD of a metal compound thin film on semiconductor devices wherein, M is Ti or Zr; R1, R2, R3 and R4 are each independently H or C1-4 alkyl; and m is an integer ranging from 2 to 5.Type: GrantFiled: April 28, 2000Date of Patent: August 14, 2001Assignee: Postech FoundationInventors: Shi-Woo Rhee, Jae-Young Shim, Jung-Hyun Lee, Dae-Hwan Kim
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Patent number: 6171958Abstract: A process for preparing a diffusion barrier on a semiconductor substrate which comprises: conducting remote plasma-enhanced metal organic chemical vapor deposition of a thin film of TiNx on said substrate using an organotitanium compound under a flow of H2 plasma, wherein x ranges from 0.1 to 1.5, provides a TiNx thin film having a low carbon content and low specific resistivity.Type: GrantFiled: January 14, 1998Date of Patent: January 9, 2001Assignee: Postech Foundation (KR)Inventors: Shi Woo Rhee, Ju Young Yun
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Patent number: 6151593Abstract: A user authentication apparatus for use in controlling access to a system inputs an owner's login name and password and then extracts the owner's timing vectors from keystroke characteristics with which the owner repeatedly types the owner's password to thereby form a training set. A neural network is trained by using each of the owner's timing vectors in the training set as an input. Thereafter, when a user inputs the owner's login name and password, it is checked if the user's password is identical to the owner's password. The user's timing vector is extracted from a keystroke characteristic to type the user's password if the checked result is affirmative, and the user is prohibited from accessing the system if otherwise. The user's timing vector is applied to the trained neural network as an input and a difference between the input and an output of the neural network is compared with a predetermined threshold.Type: GrantFiled: April 14, 1998Date of Patent: November 21, 2000Assignee: Postech FoundationInventors: Sung-Zoon Cho, Dae-Hee Han
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Patent number: 6133147Abstract: A process for preparing a metallic interconnecting plug in a semiconductor device which comprises the steps of: i) forming an insulating layer on the surface of a semiconductor substrate or a metal underlayer of the semiconductor device, ii) forming a hole in the insulating layer to expose the surface of the semiconductor substrate or the metal underlayer, iii) exposing the surface of the insulating layer to the vapor of a blocking agent under a pressure ranging from 10.sup.Type: GrantFiled: August 25, 1998Date of Patent: October 17, 2000Assignee: Postech FoundationInventors: Shi-Woo Rhee, Jong-Ho Yun
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Patent number: 6090964Abstract: A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, andR.sup.2 and R.sup.3 are each independently a perfluorinated C.sub.1-4 alkyl group.Type: GrantFiled: January 19, 1999Date of Patent: July 18, 2000Assignee: Postech FoundationInventors: Shi-Woo Rhee, Doo-Hwan Cho, Jai-Wook Park, Sang-Woo Kang
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Patent number: 5929654Abstract: A circuit for selectively generating one of three voltage level as an output has a pull-up transistor and a pull-down transistor. The circuit includes a bias voltage source for generating a constant voltage signal; a temperature compensating constant-current source for outputting variable voltage signal corresponding to a temperature change; a tri-state control circuit for receiving a data signal to generate a control signal based on the data signal; and a switching circuit, in response to the control signal, for selectively the bias voltage source and the temperature compensating constant current source to the pull-up and pull-down transistors.Type: GrantFiled: July 10, 1997Date of Patent: July 27, 1999Assignee: Postech FoundationInventors: Hong-June Park, Cheol-Hee Lee
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Patent number: 5912488Abstract: Flash EEPROM memory devices having mid-channel injection characteristics include a substrate having source and drain regions of first conductivity type therein extending adjacent a surface thereof. A stacked-gate electrode is also provided on the surface, between the source and drain regions. To provide improved mid-channel injection characteristics during programming, a preferred semiconductor channel region is provided in the substrate at a location extending opposite the stacked-gate electrode. This channel region comprises a first "source-side" region of second conductivity type (e.g., P+) and a second "drain-side" region of predetermined conductivity type (e.g., P-, N-). The second region has a lower first conductivity type dopant concentration therein than the drain region and a lower second conductivity type dopant concentration therein than said first region, and more preferably has a lower second conductivity type dopant concentration therein than said substrate.Type: GrantFiled: June 24, 1997Date of Patent: June 15, 1999Assignees: Samsung Electronics Co., Ltd, Postech FoundationInventors: Dae Mann Kim, Myoung-kwan Cho
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Patent number: 5880625Abstract: A temperature compensatory constant current generator comprises a temperature inversely proportional constant current generator for supplying a temperature inversely proportional current, a temperature proportional constant current generator for supplying a temperature proportional current, a temperature inversely proportional current supplier for outputting the temperature inversely proportional current from the temperature inversely proportional constant current generator, a temperature proportional current supplier for outputting the temperature proportional current from the temperature proportional constant current generator and a square root generator for providing a current proportional to multiplied square roots of the temperature inversely proportional current and the temperature proportional current.Type: GrantFiled: July 10, 1997Date of Patent: March 9, 1999Assignee: Postech FoundationInventors: Hong-June Park, Cheol-Hee Lee
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Patent number: 5843773Abstract: A new Bcl-2 related gene "Bfl-1", a polypeptide encoded by said gene, and a plasmid and a transformant comprising said gene are disclosed. The gene can be used to detect cancer.Type: GrantFiled: November 22, 1996Date of Patent: December 1, 1998Assignees: Korea Green Cross Corporation, Postech FoundationInventors: Hee Sup Shin, Young Chul Sung, Seok Il Hong, Sun Sim Choi, Jin Won Yun, Eun Kyoung Choi, In Chul Park