Abstract: The present disclosure is related to a superjunction metal-oxide-semiconductor field-effect transistor (MOSFET). First, a P-type semiconductor and an N-type semiconductor with high doping concentrations are embedded in an N-type drift layer through ion implantation. The P-type semiconductor and the N-type semiconductor form an I-type junction at their interface. Energy levels of intra-band and inter-band quantum states generated at the I-type junction can absorb carriers generated in the device after irradiation, and tunneling electrons between the P-type semiconductor and the N-type semiconductor. This, combined with an effect of overlapping synchronized quantum states, causes a large number of quantum state energy levels to be created to absorb carriers, thereby effectively enhancing radiation resistance of the device.

Abstract: A power factor correction (PFC) converter that suppresses inrush current using a Spirito effect is provided. The PFC converter is composed of an inductor, a plurality of transistors, and a capacitor. By serially connecting a fifth transistor with the capacitor and controlling, via a control unit, gate-to-source voltage of the fifth transistor so that the fifth transistor operates in a high-impedance state, the inrush current generated when an alternating current (AC) power source is connected is suppressed. Thus, power component damage caused by the inrush current is prevented, and power consumption is reduced, enabling the PFC converter to maintain optimal performance under high-power operation.

Abstract: A circuit and a method for improving efficiency by use of external inductor for temperature control, wherein the operating temperature of a field effect transistor is calculated by the inductor voltage. The change in operating temperature is used to adjust and control the voltage of the variable voltage gate drive module. When the operating temperature rises, the input voltage of the gate increases accordingly; when the operating temperature decreases, the input voltage of the gate decreases accordingly, thereby achieving the efficiency of regulating light and heavy loads.

Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel dies and a method of using the same, including an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor produces a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.

Abstract: A switch module with an automatic switching function and a method for automatically switching the switch module according to the load, wherein a first comparator and a second comparator are configured to automatically determine whether the load is light or heavy according to the voltage divided by a first resistor and a second resistor and the voltage of a source resistor, thereby generating a voltage control signal. A plurality of transistors are configured to receive a gate input signal according to the voltage control signal, thereby selectively bringing a GaN transistor or a MOSFET transistor in a conducting state. In this way, the output quality and efficiency of the power supply at light and heavy loads can be improved according to the characteristics of different transistors.

Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.

Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load. The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.

Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.

Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel die and an implementation method thereof, comprising an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor can produce a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.