Patents Assigned to Potens Semiconductor Corp.
  • Patent number: 11936381
    Abstract: A switch module with an automatic switching function and a method for automatically switching the switch module according to the load, wherein a first comparator and a second comparator are configured to automatically determine whether the load is light or heavy according to the voltage divided by a first resistor and a second resistor and the voltage of a source resistor, thereby generating a voltage control signal. A plurality of transistors are configured to receive a gate input signal according to the voltage control signal, thereby selectively bringing a GaN transistor or a MOSFET transistor in a conducting state. In this way, the output quality and efficiency of the power supply at light and heavy loads can be improved according to the characteristics of different transistors.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: March 19, 2024
    Assignee: POTENS SEMICONDUCTOR CORP.
    Inventors: Ching Kuo Chen, Wen Nan Huang
  • Patent number: 11804834
    Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: October 31, 2023
    Assignee: POTENS SEMICONDUCTOR CORP.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Shiu Hui Lee, Hsiang Chi Meng, Cho Lan Peng, Chuo Chien Tsao
  • Patent number: 11588473
    Abstract: A circuit with a metal-oxide semiconductor field-effect transistor and a diode module is applied to a power factor correction circuit, which can effectively reduce the heat generated by the whole system under heavy load. The circuit includes a metal-oxide semiconductor field-effect transistor and a diode module and a load determination unit. The diode module includes a plurality of diodes with a switch. The load determination unit can control the connection/disconnection of each diode in the diode module based on the magnitude of the load current. It can effectively reduce the current generated by each diode due to the load, thereby reducing the heat generation of the overall system. Moreover, due to the contact capacitance effect after the diodes are connected in parallel, the electromagnetic interference (EMI) characteristics of the power factor correction circuit of the system can be further optimized.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: February 21, 2023
    Assignee: POTENS SEMICONDUCTOR CORP.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Chih Ming Yu, Hsiang Chi Meng
  • Publication number: 20230037951
    Abstract: A metal-oxide semiconductor field-effect transistor with asymmetric parallel die and an implementation method thereof, comprising an inductor, a load recognition control unit and a metal-oxide semiconductor field-effect transistor having a first die, a second die, and a switch. The first die is larger in size than the second die. The inductor can produce a voltage signal when the load changes. The switch is controlled by the load recognition control unit such that different dies are switched on under different load conditions, thereby improving efficiency under light load condition in addition to reducing volume and cost.
    Type: Application
    Filed: November 23, 2021
    Publication date: February 9, 2023
    Applicant: Potens Semiconductor Corp.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Chih Ming Yu, Hsiang Chi Meng, Tung Ming Lai
  • Publication number: 20230038599
    Abstract: An electromagnetic interference regulator by use of capacitive parameters of the field-effect transistor for detecting the induced voltage and the induced current of the field-effect transistor to determine whether the operating frequency of the field-effect transistor is within the preset special management frequency of electromagnetic interference. When the basic frequency and the multiplied frequency exceed the limit, the content of the external capacitor unit can be adjusted to assist the products using field-effect transistors to maintain excellent electromagnetic interference adjustment capabilities under various loads, thereby optimizing the characteristics of electromagnetic interference.
    Type: Application
    Filed: November 23, 2021
    Publication date: February 9, 2023
    Applicant: Potens Semiconductor Corp.
    Inventors: Wen Nan Huang, Ching Kuo Chen, Shiu Hui Lee, Hsiang Chi Meng, Cho Lan Peng, Chuo Chien Tsao