Abstract: A field programmable gate array (FPGA) comprises a set of configurable logic blocks (CLBs), input/output blocks (IOBs), and interconnect wiring for communicating data between the CLBs and IOBs. A resonating circuit provides a resonating signal to the circuit blocks. The circuit blocks provide the resonating signal to the interconnect wires to communicate a first binary value, and a static voltage to communicate a second binary value. The output signals of the circuit blocks change state when the resonating signal is at or near the static voltage. This reduces switching losses that exist within prior art FPGAs.

Abstract: An SRAM cell comprises a first inverter having an output lead coupled to the input lead of a second inverter via a first resistor. The output lead of the second inverter is coupled to the first inverter input lead via a second resistor. A first write bit line is coupled to the first inverter input lead via a first switch, and a second write bit line is coupled to the second inverter input lead via a second switch. Because of the resistors, the circuitry driving write bit lines does not have to overpower the inverters when writing data to the cell. The cell is part of an array comprising several columns of SRAM cells, each column coupled to a pair of write bit lines. A resonating oscillator drives the write bit lines with a sine wave. This reduces the power consumed by the SRAM array.