Abstract: A semiconductor diode includes: a P-type semiconductor; an N-type semiconductor having a band gap smaller than a band gap of the P-type semiconductor; and an insulator provided between the P-type semiconductor and the N-type semiconductor, the insulator having a band gap larger than the band gap of the P-type semiconductor and the band gap of the N-type semiconductor, a difference between the band gap of the P-type semiconductor and the band gap of the N-type semiconductor is 1 eV or higher, and a difference between the band gap of the P-type semiconductor and the band gap the insulator is 1 eV or lower.

Abstract: A secondary battery includes: a first electrode configured to function as a p-type semiconductor; a second electrode configured to function as an n-type semiconductor; and a solid electrolyte provided between the first electrode and the second electrode, the solid electrolyte contains a compound and polyethylene oxide, the compound has a perovskite structure.

Abstract: A secondary battery includes: a first electrode configured to function as a p-type semiconductor; a second electrode configured to function as an n-type semiconductor; and a hole transfer member provided between the first electrode and the second electrode, the first electrode is a sputtered film or a vapor deposited film, the second electrode is a sputtered film or a vapor deposited film containing at least one of silicon and graphene, and the hole transfer member is a sputtered film or a vapor deposited film containing a dielectric material.

Abstract: A secondary battery includes: a first electrode configured to function as a p-type semiconductor; a second electrode configured to function as an n-type semiconductor; and a solid electrolyte provided between the first electrode and the second electrode, the solid electrolyte contains a compound and polyethylene oxide, the compound has a perovskite structure.