Abstract: A direct write laser based machining process wherein a laser beam is controlled to machine a glass material in an interlaced raster scan pattern. An embodiment of machining a glass substrate to form an optical element is described. An ultrashort pulsed laser is used for machining and smoothing fused silica, followed by CO2 laser polishing. High speed and high quality machining is possible using this approach, which allows efficient use of high laser repetition rates.

Abstract: A field mapping optical system and method for converting a light beam having a known spatially coherent first optical field to a second optical field with a required intensity distribution and flat wavefront at a desired distance from the system, by creating an intermediate optical field, between the first and second optical fields, the intermediate optical field being derived from the inverse Fourier transform of the second optical field. The optical system provides a compact and simplified field mapper.

Abstract: A process for the manufacture of custom freeform optical elements utilizing parameterized modelling. A system for the automatic manufacture of a custom optical element is also described with the manufacturing being by laser micro-machining. The process and system allow customers to specify and order via a web interface and so reduce engineering time, overhead and cost.

Abstract: A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.