Patents Assigned to POWER PHOTONIC
  • Patent number: 10274738
    Abstract: A field mapping optical system and method for converting a light beam having a known spatially coherent first optical field to a second optical field with a required intensity distribution and flat wavefront at a desired distance from the system, by creating an intermediate optical field, between the first and second optical fields, the intermediate optical field being derived from the inverse Fourier transform of the second optical field. The optical system provides a compact and simplified field mapper.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: April 30, 2019
    Inventors: Natalia Trela-McDonald, Roy McBride, Howard John Baker, Matthew Oren Currie
  • Patent number: 9760084
    Abstract: A process for the manufacture of custom freeform optical elements utilizing parameterized modelling. A system for the automatic manufacture of a custom optical element is also described with the manufacturing being by laser micro-machining. The process and system allow customers to specify and order via a web interface and so reduce engineering time, overhead and cost.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: September 12, 2017
    Inventors: Matthew Oren Currie, Simon Clovis Younger, Roy McBride
  • Publication number: 20160005921
    Abstract: An LED optimized for use in low-cost gas or other non-solid substance detection systems, emitting two wavelengths (“colors”) of electromagnetic radiation from the same aperture is disclosed. The LED device emits a light with a wavelength centered on an absorption line of the target detection non-solid substance, and also emits a reference line with a wavelength that is not absorbed by a target non-solid substance, while both wavelengths are transmitted through the atmosphere with low loss. Since the absorption and reference wavelengths are emitted from the same exact aperture, both wavelengths can share the same optical path, reducing the size and cost of the detector while also reducing potential sources of error due to optical path variation.
    Type: Application
    Filed: July 1, 2015
    Publication date: January 7, 2016
    Inventors: Sergey Suchalkin, Gregory Belenky, Leon Shterengas, David Westerfeld
  • Patent number: 8817832
    Abstract: A multi-wavelength laser array of a plurality of emitters in a diode bar or stack where each beam is deflected by a different angle to be incident upon a uniform volume holographic grating with a portion of the beam being deflected as a feedback portion while a further portion provides a wavelength tuned output unique to each emitter. The arrangement of a uniform volume holographic grating with deflectors such as phaseplates eliminates the need to use expensive wavelength chirped gratings.
    Type: Grant
    Filed: May 7, 2012
    Date of Patent: August 26, 2014
    Assignee: Power Photonic Ltd.
    Inventors: Natalia Trela, Howard John Baker, Roy McBride
  • Patent number: 8570657
    Abstract: A micro-optical element for use with an edge-emitting laser diode bar stack, the element comprising a plurality of spaced apart fast-axis collimators formed as a monolithic array, wherein the spacing between the collimators in the fast-axis varies across the micro-optic element. A method of manufacturing a micro-optical element for use with a laser diode bar stack, using a wavelength stabilized CO2 laser is also described.
    Type: Grant
    Filed: November 8, 2011
    Date of Patent: October 29, 2013
    Assignee: Power Photonic, Ltd.
    Inventors: Roy McBride, Matthew Oren Currie, Jozef Jacek Wendland
  • Publication number: 20120223362
    Abstract: A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.
    Type: Application
    Filed: March 2, 2011
    Publication date: September 6, 2012
    Inventors: Gregory Belenky, Leon Shterengas, Arthur David Westerfeld