Abstract: A system and method of using a multi-zone substrate to perform electromigration testing of integrated circuits in the high-frequency RF domain. Here, the device under test (DUT) is affixed to a single, multi-zone substrate with a high-temperature zone, a transitional thermal isolation zone, to a low-temperature zone. The high-temperature zone has a DUT interface with a localized heater arrangement. The low-temperature zone provides the interface with RF lines to the RF test instrumentation. The DUT input and output pins are attached to the high-temperature zone, and the configuration allows both direct current (DC) and RF stressing of the DUT. The high-temperature zone can raise the DUT temperature to 300-450° C. The RF test port and associated test equipment remain at room temperature.