Abstract: Disclosed is a SiC wide trench-type junction barrier Schottky diode. The Schottky diode includes a SiC N? epitaxial layer formed on a SiC N+-type substrate and a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N? epitaxial layer. The Schottky diode includes a P+ junction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N? epitaxial layer and a cathode electrode formed on the lower part of the SiC N+-type substrate. The width of the P+ junction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the P+ junction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.

Abstract: Disclosed is a SiC wide trench-type junction barrier Schottky diode. The Schottky diode includes a SiC N? epitaxial layer formed on a SiC N+-type substrate and a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N? epitaxial layer. The Schottky diode includes a P+ junction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N? epitaxial layer and a cathode electrode formed on the lower part of the SiC N+-type substrate. The width of the P+ junction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the P+ junction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.