Abstract: A thyristor device that can include a disc-shaped device comprising a semiconductor material forming alternating p-n-p-n type layers. The device can include a gate area extending from an external gate lead contact point to a plurality of thyristor units connected in parallel. Each thyristor unit can include at least one exposed pB layer portion to form at least one plural point to which gate current can be directed. Further, an insulator layer can be formed over the gate area to insulate at least a portion of the gate electrode from the pB layer so that displacement current can be directed to short dots and then to the plural points. Current entering each thyristor unit can generate a turned-on area at each thyristor unit that spreads throughout the thyristor device.

Abstract: An electric machine having a rectifier assembly placed within a rotating shaft of the electric machine to convert the AC output of the electric machine to DC prior to transmission of the electricity from the electric machine.

Abstract: An electric machine having a rectifier assembly placed within a rotating shaft of the electric machine to convert the AC output of the electric machine to DC prior to transmission of the electricity from the electric machine.

Abstract: A power bipolar transistor has a MOSFET located within the base region, the MOSFET shorting the transistor emitter and base regions together when the bipolar transistor is in an off condition with a large base to collector voltage. The bipolar transistor is provided with floating guard rings, and the gate of the MOSFET is connected to one of these floating guard rings, so that when the depletion region from the base to collector junction reaches this floating guard ring, the MOSFET gate receives a voltage to turn on the MOSFET and provide the emitter to base short.