Patents Assigned to Pranair Technology
  • Patent number: 6375913
    Abstract: An integrated system for producing high purity silicon dioxide comprising: a) a source of an oxygen-containing feed gas containing at least one impurity, b) an oxygen transport membrane cell containing an oxygen-selective transport membrane that has a cathode side and an opposing anode side, the membrane being at an elevated temperature effective for separation of oxygen in the feed gas from the impurity by transporting oxygen ions from the oxygen-containing feed gas through the membrane to the anode to form a purified oxygen permeate on the anodeside, while retaining an essentially oxygen-depleted, impurity-containing retentate on the cathode side, c) a passageway from the source (a) to the cathode side of the membrane cell, d) a silicon source, and e) a silicon oxidation furnace, in communication with the anode side of the membrane cell, for reaction of the purified oxygen permeate with silicon from the silicon source, at an elevated reaction temperature effective for the reaction, in order to produce the h
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: April 23, 2002
    Assignee: Pranair Technology
    Inventors: Kevin Bruce Albaugh, Nitin Ramesh Keskar