Abstract: An atomic force microscope (AFM) has been used to machine complex patterns and to form free structural objects in thin layers of MoO.sub.3 grown on the surface of MoS.sub.2. The AFM tip can pattern lines with .ltoreq.10 nm resolution and then image the resulting structure without perturbation by controlling the applied load. Distinct MoO.sub.3 structures can also be defined by AFM machining, and furthermore, these objects can be manipulated on the MoS.sub.2 substrate surface using the AFM tip. These results suggest application to nanometer scale diffraction gratings, high-resolution lithography masks, and possibly the assembly of nanostructures with novel properties.
Type:
Grant
Filed:
July 17, 1992
Date of Patent:
October 12, 1993
Assignee:
President and Trustees of Harvard College