Patents Assigned to President of Kanazawa University
  • Patent number: 7485697
    Abstract: The object of this invention is to elucidate the factors involved in the regulation of AGE (advanced glycation endproducts, which are produced in a living body accompanied with diabetes and aging) and RAGE (the receptor for AGE), in order to facilitate investigation on the biological activities, physiological phenomenon and diseases related to AGE and RAGE. Plural molecular species are known to exist for RAGE, and among such molecular species, soluble RAGE exhibits the activity to modulate interaction between AGE and transmembrane-type RAGE. Using this soluble RAGE or a nucleic acid encoding it, the soluble RAGE can be measured, in addition, investigation on various physiological phenomenon, biological activities, and diseases related to interaction between AGE and RAGE can be performed to facilitate development a medicine having further efficacy.
    Type: Grant
    Filed: March 19, 2002
    Date of Patent: February 3, 2009
    Assignee: Japan as Represented by President of Kanazawa University
    Inventors: Hiroshi Yamamoto, Hideto Yonekura, Yasuhiko Yamamoto, Shigeru Sakurai, Takuo Watanabe
  • Publication number: 20070252113
    Abstract: There is disclosed a gradient structure material comprising a substrate 1 and a functional material 2 formed on the substrate. The gradient structure material is thermally treated while a desired gradient temperature is applied to a specific direction and a specific region of the functional material on the substrate. Consequently, without adding “gradient structure” of a component concentration, a content of oxide, or a crystal structure, the functional material on the substrate is provided with useful function which is not heretofore existed, or a performance can be enhanced unlike a conventional technique.
    Type: Application
    Filed: January 8, 2004
    Publication date: November 1, 2007
    Applicants: Japan as Represented by President of Kanazawa University, Ihi Aerospace Co., Ltd.
    Inventors: Tomonobu Hata, Kimihiro Sasaki, Shinichi Morita, Kimiko Morita
  • Patent number: 6734978
    Abstract: A profile measurement apparatus of the present invention is characterized in that two flash light beams, having wavelengths slightly different from each other, are emitted to an object with a predetermined interval t1 therebetween, and when a camera picks up interference light formed by light beams reflected from the object and a light beam reflected from the reference mirror, while moving the object in a direction, in which the two flash light beams are directed, in units of intervals t2 at which each of the two flash light beams is cyclically emitted, a phase shift amount corresponding to a movement amount of the object at a time is set to a value falling within a range of 2n&pgr;±&pgr;/2±&pgr;/4.
    Type: Grant
    Filed: March 1, 2002
    Date of Patent: May 11, 2004
    Assignee: President of Kanazawa University
    Inventor: Masaaki Adachi
  • Patent number: 6251670
    Abstract: An object of the present invention is to provide a method of enabling perfusion culture efficiently and simply by agglutinating cells with Lectin, which is a naturally-occurring agglutinin, thereby separating the cells and the culture medium. According to the method of the present invention, lectin is added to a culture medium to quickly agglutinate and precipitate the cells, thereby separating the culture medium and the cells. Hence, it is easy to remove old culture medium and replenish with fresh culture medium. Accordingly, if the method of the present invention is used, the perfusion culture is performed automatically and on an industrial scale.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: June 26, 2001
    Assignee: President of Kanazawa University
    Inventors: Tanihiro Yoshimoto, Hiroyuki Takamatsu
  • Patent number: 5064779
    Abstract: In a method of manufacturing a poly-Si film, silicon is deposited on a substrate by means of a thermal decomposition of a feed gas and plasma generation. The method comprises the step of arranging said substrate within a reaction apparatus, the step of introducing into said reaction apparatus a feed gas containing a silane-series gas for thermal decomposition of the feed gas at 500.degree. to 800.degree. C., and the step of generating plasma within the feed gas by applying power for generating the plasma simultaneously with the thermal decomposition, said power for plasma generation being controlled at a level lower than the power applied for forming a poly-Si film oriented in the <110> direction, so as to form a poly-Si film substantially oriented in the <100> direction and having a smooth surface.
    Type: Grant
    Filed: January 31, 1990
    Date of Patent: November 12, 1991
    Assignee: President of Kanazawa University
    Inventor: Seiichi Hasegawa