Abstract: A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

Abstract: A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containing species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.

Abstract: A chemical vapor deposition (CVD) reactor comprising: a reactor chamber; a substrate holder located within the reactor chamber; a gas inlet system arranged to provide a gas flow rotating above the substrate holder; and a gas exhaust. The flow characteristics of the precursor gas are controlled to equalize the thin film thickness across the substrate surface by forcing the gas into a smaller volume as it moves across the substrate. With a central exhaust, this is done by reducing the height of the reactor chamber with increasing proximity to the center of the reactor chamber so that the reactor volume per unit distance decreases as the gas moves from the inlet to the exhaust.

Abstract: A method for selective deposition of integrated circuit thin film, the method comprising: providing a substrate having a surface in a deposition chamber; depositing a photosensitive film on the substrate surface; selectively exposing a portion of the film to UVL (ultraviolet light), thereby creating an exposed film portion and an unexposed film portion; providing, in the deposition chamber, a mist of liquid precursor particles having a first polarity; and utilizing the first polarity to migrate the mist particles to one of either the exposed film portion or the unexposed film portion.

Abstract: A Chemical Vapor Deposition (CVD) vaporizer comprising: a liquid supply assembly having an environment supporting a liquid state for a plurality of precursor components of a liquid precursor blend; a venturi operative to atomize said liquid precursor blend; a vaporization chamber, located proximate to said liquid supply assembly and said venturi, having an environment supporting a vapor state for said plurality of precursor components; and a thermal barrier located between said liquid supply assembly and said vaporization chamber enabling preservation of a large temperature disparity between said liquid supply assembly and said proximately located vaporization chamber.

Abstract: Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

Abstract: Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

Abstract: A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are introduced to the interior chamber or an oscillating chuck is incorporated to influence the boundary layer thickness and uniformity.

Abstract: A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are incorporated for introducing disturbance into the interior chamber of the reactor, or an oscillating or vibrating chuck is incorporated within the interior chamber, to influence the boundary layer thickness and uniformity.

Abstract: A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area.