Abstract: A system for atomic force microscopy in which a sharp electrode tip of an flexing probe cantilever is positioned closely adjacent a sample being probed for its electrical characteristics. An optical beam irradiates a portion of the sample surrounding the probe tips and is modulated at a radio or lower modulation frequency. In one embodiment, a reference microwave signal is incident to the electrode tip. Microwave circuitry receives a microwave signal from the probe tip, which may be the reflection of the incident signal. Electronic circuitry processes the received signal with reference to the modulation frequency to produce one or more demodulated signals indicative of the electronic or atomic properties of the sample. Alternatively, the optical beam is pulsed and the demodulated signal is analyzed for its temporal characteristics. The beam may non-linearly produce the microwave signal. Two source lasers may have optical frequencies differing by the microwave frequency.

Abstract: A system for atomic force microscopy in which a sharp electrode tip of an flexing probe cantilever is positioned closely adjacent a sample being probed for its electrical characteristics. An optical beam irradiates a portion of the sample surrounding the probe tips and is modulated at a radio or lower modulation frequency. In one embodiment, a reference microwave signal is incident to the electrode tip. Microwave circuitry receives a microwave signal from the probe tip, which may be the reflection of the incident signal. Electronic circuitry processes the received signal with reference to the modulation frequency to produce one or more demodulated signals indicative of the electronic or atomic properties of the sample. Alternatively, the optical beam is pulsed and the demodulated signal is analyzed for its temporal characteristics. The beam may non-linearly produce the microwave signal. Two source lasers may have optical frequencies differing by the microwave frequency.

Abstract: A system for atomic force microscopy in which a sharp electrode tip of an flexing probe cantilever is positioned closely adjacent a sample being probed for its electrical characteristics. An optical beam irradiates a portion of the sample surrounding the probe tips and is modulated at a radio or lower modulation frequency. In one embodiment, a reference microwave signal is incident to the electrode tip. Microwave circuitry receives a microwave signal from the probe tip, which may be the reflection of the incident signal. Electronic circuitry processes the received signal with reference to the modulation frequency to produce one or more demodulated signals indicative of the electronic or atomic properties of the sample. Alternatively, the optical beam is pulsed and the demodulated signal is analyzed for its temporal characteristics. The beam may non-linearly produce the microwave signal. Two source lasers may have optical frequencies differing by the microwave frequency.

Abstract: A system for atomic force microscopy in which a sharp electrode tip of an flexing probe cantilever is positioned closely adjacent a sample being probed for its electrical characteristics. An optical beam irradiates a portion of the sample surrounding the probe tips and is modulated at a radio or lower modulation frequency. In one embodiment, a reference microwave signal is incident to the electrode tip. Microwave circuitry receives a microwave signal from the probe tip, which may be the reflection of the incident signal. Electronic circuitry processes the received signal with reference to the modulation frequency to produce one or more demodulated signals indicative of the electronic or atomic properties of the sample. Alternatively, the optical beam is pulsed and the demodulated signal is analyzed for its temporal characteristics. The beam may non-linearly produce the microwave signal. Two source lasers may have optical frequencies differing by the microwave frequency.

Abstract: A microwave probe having a metal tip on the free end of a microcantilever. In one embodiment, a pyramidal pit is isotropically etched in a device wafer of monocrystalline silicon. Oxidation may sharpen the pit. Deposited metal forms the metal tip in the pit and a bottom shield. Other metal sandwiched between equally thick dielectric layers contact the tip and form a conduction path along the cantilever for the probe and detected signals. Further metal forms a top shield overlying the conduction path and the dielectrically isolated tip and having equal thickness to the bottom shield, thus producing together with the symmetric dielectric layers a balanced structure with reduced thermal bending. The device wafer is bonded to a handle wafer. The handle is formed and remaining silicon of the device wafer is removed to release the cantilever.

Abstract: A microwave probe having a metal tip on the free end of a microcantilever. In one embodiment, a pyramidal pit is isotropically etched in a device wafer of monocrystalline silicon. Oxidation may sharpen the pit. Deposited metal forms the metal tip in the pit and a bottom shield. Other metal sandwiched between equally thick dielectric layers contact the tip and form a conduction path along the cantilever for the probe and detected signals. Further metal forms a top shield overlying the conduction path and the dielectrically isolated tip and having equal thickness to the bottom shield, thus producing together with the symmetric dielectric layers a balanced structure with reduced thermal bending. The device wafer is bonded to a handle wafer. The handle is formed and remaining silicon of the device wafer is removed to release the cantilever.

Abstract: A microwave probe having a metal tip on the free end of a microcantilever. In one embodiment, a pyramidal pit is isotropically etched in a device wafer of monocrystalline silicon. Oxidation may sharpen the pit. Deposited metal forms the metal tip in the pit and a bottom shield. Other metal sandwiched between equally thick dielectric layers contact the tip and form a conduction path along the cantilever for the probe and detected signals. Further metal forms a top shield overlying the conduction path and the dielectrically isolated tip and having equal thickness to the bottom shield, thus producing together with the symmetric dielectric layers a balanced structure with reduced thermal bending. The device wafer is bonded to a handle wafer. The handle is formed and remaining silicon of the device wafer is removed to release the cantilever.