Abstract: Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. Cadmium telluride based thin film photovoltaic devices are also generally provided. The device can include a substrate; a transparent conductive oxide layer on the substrate; a cadmium sulfide layer on the transparent conductive oxide layer; and, a cadmium telluride layer on the cadmium sulfide layer. The cadmium sulfide layer includes fluorine.

Abstract: Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. An intermediate substrate for forming a cadmium telluride based thin-film photovoltaic device is also provided.

Abstract: Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. Methods of depositing a cadmium sulfide layer on a substrate and methods of manufacturing a cadmium telluride thin film photovoltaic device are also generally provided.

Abstract: Systems and methods for deposition of a thin film layer on photovoltaic (PV) module substrates are generally provided. The system can include a sputtering chamber configured to receive the substrates, at least two targets positioned within the sputtering chamber, and an independent power source connected to each target. Each target can be positioned within the sputtering chamber to face the substrates such that the targets are simultaneously sputtered to supply source material to a plasma field for forming a thin film layer on a surface of the substrates. The multiple targets can also be positioned such that a facing axis extending perpendicularly from a center of each target converges at a point on the surface of the substrate.

Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A deposition head is configured for sublimating a source material supplied thereto. The sublimated source material condenses onto a transport conveyor disposed below the deposition head. A substrate conveyor is disposed below the transport conveyor and conveys substrates in a conveyance path through the apparatus such that an upper surface of the substrates is opposite from and spaced below a lower leg of the transport conveyor. A heat source is configured adjacent the lower leg of the transport conveyor. The source material plated onto the transport conveyor is sublimated along the lower leg and condenses onto to the upper surface of substrates conveyed by the substrate conveyor.

Abstract: A system and associated process are provided for recovering cadmium telluride (CdTe) that has plated onto components, such as components used in the manufacture of photovoltaic (PV) modules. The system includes a vacuum oven configured for maintaining a vacuum and being heated to a temperature effective for sublimating CdTe off of components placed within the oven. A collection member is disposed so that sublimated CdTe generated in the oven diffuses to the collection member. The collection member is maintained at a temperature effective for causing the sublimated CdTe to plate thereon. The collection member is subsequently processed to collect the plated CdTe.

Abstract: A system and related method for deposition of multiple thin film layers on photovoltaic (PV) module substrates includes a first processing side wherein the substrates are conveyed in a first direction for deposition of a first thin film layer on the substrates. A second processing side is operably disposed relative to the first processing side such that substrates exiting the first processing side are subsequently conveyed in a second direction through the second processing side for deposition of a second thin film layer on the first thin film layer. A first transfer station is operably disposed between the first processing side and the second processing side to receive the substrates from an exit of the first processing side and to introduce the substrates into an entry of the second processing side such that the substrates are continuously moved through the first and second processing sides for deposition of multiple thin film layers thereon.

Abstract: A method for processing substrates in the formation of photovoltaic (PV) modules, the substrates having a plurality of thin film layers deposited thereon. The method includes determining the geometric center of the substrate and performing subsequent processing steps for defining individual cells on the substrate using the geometric center of the substrate as a starting reference point for such processing steps.

Abstract: Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm2 to about 2500 cm2.

Abstract: Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The conveyor system is operably disposed within the treatment system and configured for transporting substrates in a serial arrangement into and through the preheat section, into and through the treatment chamber, and into and through the anneal oven at a controlled speed. The treatment chamber is configured for applying a material to a thin film on a surface of the substrate and the anneal oven is configured to heat the substrate to an annealing temperature as the substrates are continuously conveyed by the conveyor system through the treatment chamber.

Abstract: An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: A feed system and related process are configured to continuously feed measured doses of source material to a vapor deposition apparatus wherein the source material is sublimated and deposited as a thin film on a substrate. The system includes a bulk material hopper, and an upper dose cup disposed to receive source material from the hopper. A lower dose cup is disposed in a vacuum lock chamber to receive a measured dose of source material from the upper dose cup. A transfer mechanism is disposed below the vacuum lock chamber to receive the measured dose of source material from the lower dose cup and to transfer the source material to a downstream deposition head while isolating the deposition conditions and sublimated source material within the deposition head.

Abstract: A system for vapor deposition of a thin film layer on photovoltaic (PV) module substrates includes a system for cool-down of the vacuum chamber through which substrates are conveyed in a vapor deposition process. The cool-down system is configured with the vacuum chamber to recirculate a cooling gas through the vacuum chamber and through an external heat exchanger in a closed cool-down loop. An associated method for forced cool-down of the vacuum chamber is also provided.

Abstract: A conveyor assembly for conveying substrates through a vapor deposition system includes a first carriage rail and a second carriage rail disposed at an opposite side of the conveyor assembly. The first and second carriage rails include a plurality of roller positions spaced longitudinally therealong. The carriage rails further include a pair of wheels at each of the roller positions, with the wheels spaced apart so as to define a cradle at the respective roller position. At least one of the wheels at each roller position on is drive wheel. A plurality of rollers extend between the first and second carriage rails. The rollers have ends that drop into the cradles at the roller positions such that the rollers are removable from the carriage rails by being lifted out of the cradles at the roller positions.