Abstract: An optical illuminator using Vertical Cavity Surface Emitting Laser (VCSEL) is disclosed. Optical modules configured using single VCSEL and VCSEL arrays bonded to a thermal submount to conduct heat away from the VCSEL array, are suited for high power and high speed operation. High speed optical modules are configured using single VCSEL or VCSEL arrays connected to a high speed electronic module on a common thermal submount or on a common Printed Circuit Board (PCB) platform including transmission lines. The electronic module provides low inductance current drive and control functions to operate the VCSEL and VCSEL array. VCSEL apertures are designed for a desired beam shape. Additional beam shaping elements are provided for VCSELs or VCSEL arrays, for desired output beam shapes and/or emission patterns. VCSEL arrays may be operated in continuous wave (CW) or pulse operation modes in a programmable fashion using a built-in or an external controller.

Abstract: A wavelength locker comprising a semiconductor or air gap etalon is used to monitor and maintain the output wavelength of a coherent radiation source. Said etalon may be fabricated from a commercially available silicon wafer, with individual regions of the wafer, each functioning as a separate etalon, etched or otherwise processed to produce different thicknesses. Illumination by the coherent radiation source generated transmitted signal intensities that are detected and processed to determine the output wavelength of the coherent radiation source. A wavelength tuner is then used to maintain or vary the output wavelength based on continuous measurements of etalon signal intensity.

Abstract: A vertical cavity surface emitting laser (VCSEL) device with improved power and beam characteristics. The VCSEL device contains one VCSEL or an array of VCSELs. Each VCSEL has a corresponding integrated microlens, and a heat sink is attached to the device side of the VCSEL device. The heat sink allows improved heat dissipation, and therefore provides improved power characteristics of the VCSEL device output laser beam. The microlens or microlens array allows easier and more compact focussing of the VCSEL device output laser beam. The VCSEL device can be used in a variety of optical systems, and its improved power and focusing characteristics provide a compact, low power, low cost laser system.

Abstract: A vertical cavity surface emitting laser (VCSEL) device with improved power and beam characteristics. The VCSEL device contains one VCSEL or an array of VCSELs. Each VCSEL has a corresponding integrated microlens, and a heat sink is attached to the device side of the VCSEL device. The heat sink allows improved heat dissipation, and therefore provides improved power characteristics of the VCSEL device output laser beam. The microlens or microlens array allows easier and more compact focussing of the VCSEL device output laser beam. The VCSEL device can be used in a variety of optical systems, and its improved power and focusing characteristics provide a compact, low power, low cost laser system.

Abstract: A wavelength locker comprising a semiconductor or air gap etalon is used to monitor and maintain the output wavelength of a coherent radiation source. Said etalon may be fabricated from a commercially available silicon wafer, with individual regions of the wafer, each functioning as a separate etalon, etched or otherwise processed to produce different thicknesses. Illumination by the coherent radiation source generated transmitted signal intensities that are detected and processed to determine the output wavelength of the coherent radiation source. A wavelength tuner is then used to maintain or vary the output wavelength based on continuous measurements of etalon signal intensity.

Abstract: An IAU laser is stabilized to reduce intensity fluctuations. The laser comprises an IAU gain medium disposed in an optical resonance cavity and a multiphoton absorbing medium disposed in the cavity to reduce intensity fluctuations. A pump source to excite the gain medium is coupled to the cavity. In operation, the multiphoton absorbing material absorbs primarily at high intensity levels, effectively increasing the loss at high intensities. In an advantageous embodiment, the active medium comprises erbium-doped glass and the multiphoton absorber comprises a body of semiconductor exhibiting two-photon absorption at the emission wavelength.