Abstract: Passive components adapted for integration with at least one active semiconductor device, in an embodiment, comprise at least one metallic structure dimensioned and arranged to absorb and/or reflect a major fraction of incident electromagnetic radiation received at one or more wavelengths of a first group of wavelengths. This prevents radiation within the first group of wavelengths from being received and/or processed by the at least one active device. In an embodiment, one or more metallic structures are dimensioned and arranged to direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation within the second group of wavelengths by the at least one active semiconductor device. In some embodiments, the passive component comprises a passive optical filter for use in spectroscopic applications, and the active semiconductor device is a detector or sensor.

Abstract: Provided among other things is a method of conducting on-site quality control during production of underground argon, comprising: (1) concurrent with extraction of underground argon material, periodically sampling the argon material; (2) measuring an index amount of at least one of (a) an 36Ar to 40Ar ratio or (b) an 38Ar to 40Ar ratio from the sampled argon material; and (3) conducting one or more of the following: (a) interrupting production to determine a source of infiltration when a measured index amount for a sample indicates an infiltration of atmospheric argon that is outside a production quality standard, or (b) cataloging whether a production run satisfies a product quality standard for lack of atmospheric argon based on the measured index amounts for the samples when a production run for the argon is complete.

Abstract: The present invention is directed towards a thin-film device. In one embodiment, the thin film device comprises a scattering layer comprising a substrate, the substrate comprising a plurality of voids, and a device stock formed atop the scattering layer, wherein the plurality of voids have a high refractive index as compared to a refractive index of the substrate. Another embodiment of the present invention is directed towards a process for fabricating a thin-film device, the process comprising dissolving a precursor in an organic solvent to form a solution, coating the solution onto a substrate to form a film, immersing the film and the substrate into an antisolvent bath for a first period of time so as to form a plurality of air voids within the film, removing the film and substrate from the anti-solvent bath to dry and cure for a second period of time to create a porous film adhered to the substrate, the porous film and the substrate forming a scattering layer.

Abstract: A computer implemented method and apparatus for processing images comprises obtaining two or more images acquired by ultrasound. One or more operating parameters of the ultrasound probe (transducer) are varied so that the resulting images of a material or object under investigation differ with respect to intensity. Examples of parameters which may be varied include probe angle, frequencies, and even the time and/or resolution of the respective images. The method further comprises creating a new image by selectively subtracting one or more images from one or more others. In an embodiment, there are two images and one is partially subtracted from the other. If negative values are obtained as a result of the subtraction, such values are set to zero.

Abstract: Provided among other things are a scanning electron microscope, scanning transmission electron microscope, focused ion beam microscope, ion beam micromachining device, or scanning probe nanofabrication device, wherein the microscope or device is configured to move a substrate and a scanning modality relative to one another with an enclosed sinusoidal trajectory, and methods of operation.

Abstract: Passive components adapted for integration with at least one active semiconductor device, in an embodiment, comprise at least one metallic structure dimensioned and arranged to absorb and/or reflect a major fraction of incident electromagnetic radiation received at one or more wavelengths of a first group of wavelengths. This prevents radiation within the first group of wavelengths from being received and/or processed by the at least one active device. In an embodiment, one or more metallic structures are dimensioned and arranged to direct an amount of incident radiation, received at one or more wavelengths of a second group of wavelengths, sufficient to enable receiving or processing of incident radiation within the second group of wavelengths by the at least one active semiconductor device. In some embodiments, the passive component comprises a passive optical filter for use in spectroscopic applications, and the active semiconductor device is a detector or sensor.

Abstract: A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

Abstract: Systems and methods for enhanced quantitative analysis of hybridization intensity measurements obtained from oligonucleotide probes and other probes exposed to target samples are provided by virtue of the present invention. One embodiment ameliorates the effects of high frequency noise superimposed on a hybridization intensity measurement signal measured over successive probe alignments to a target sample sequence. Detection of expressed genes and ESTs and quantitative measurement of expression level may be improved. Mutation detection and base calling may be improved.