Abstract: A device with programmable resistance comprising memristive material between conductive electrodes on a substrate or in a film stack on a substrate is provided. During fabrication of a memristive device, a memristive layer may be hydrated after deposition of the memristive layer. The hydration of the memristive layer may be performed utilizing thermal annealing in a reducing ambient, implant or plasma treatment in a reducing ambient, or a deionized water rinse. Additionally, plasma-assisted etching of an electrode may be performed with hydration or in place of hydration to electroform devices in a batch, in situ process. The memristive device may be electroformed at low voltage and passivated to allow for device operation in air. Further, the memristive device is suitable for high throughput manufacturing.

Abstract: A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory apparatus are compatible with current microelectronic fabrication techniques. The resistive memory apparatus is nonvolatile or requires no power to maintain a programmed state. The resistive memory device may also be directly integrated with other microelectronic components.