Patents Assigned to Production Engineering Association
  • Method for forming a doped ZnSe single crystal
    Patent number: 5169799
    Abstract: A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.
    Type: Grant
    Filed: April 15, 1991
    Date of Patent: December 8, 1992
    Assignees: Sumitomo Electric Industries, Ltd., Production Engineering Association
    Inventors: Tsunemasa Taguchi, Hirokuni Nanba
  • Method for producing semiconductive single crystal
    Patent number: 5015327
    Abstract: A ZnSe thin film with good quality is homoepitaxially grown on a ZnSe single crystal substrate which is produced by the Recrystallization Traveling Heater Method.
    Type: Grant
    Filed: March 14, 1989
    Date of Patent: May 14, 1991
    Assignees: Production Engineering Association of Shin-Osaka, Sumitomo Electric Industries, Inc.
    Inventors: Tsunemasa Taguchi, Hirokuni Nanba
  • Method for producing semiconductive single crystal
    Patent number: 4983249
    Abstract: A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.
    Type: Grant
    Filed: March 9, 1989
    Date of Patent: January 8, 1991
    Assignees: Production Engineering Association, Sumitomo Electric Industries, Ltd.
    Inventors: Tsunemasa Taguchi, Hirokuni Nanba