Abstract: A device and method uses charge trapping to configure and adjust a threshold voltage (Vt) for a field effect transistor (FET). The charge trapping mechanism can be controlled by bias voltages applied to the FET, so that rapid/dynamic changes can be made to Vt without the use of conventional program/erase cycles. The threshold voltage can thus be set as a function of applied operating voltages.
Abstract: An integrated circuit device includes a charge pump for providing a bias signal to a field effect transistor (FET) that is capable of operating in a negative differential resistance mode. The bias signal is applied to a gate of the NDR FET to control the characteristics of the NDR behavior.