Abstract: The invention provides uniform ion dose at the wafer position by varying the current of the ion beam synchronously with the scan. The beam is scanned by a linear scan, and beam scan position information is sent from the beam scan electronics to the beam control circuit connected with the ion source; this information transfer preferably occurs over a fiber optic link to cross the high voltage between the two sets of electronics. At initiation, the beam current is held constant and a Faraday cup is scanned across the beam to measure the variation of dose with scan position. A beam versus scan position waveform is calculated to correct the variation in dose; and the waveform is then loaded into a memory in the ion beam control circuit. The ion beam control circuit then varies the output of the ion source synchronously with the scan to adjust the dose as a function of scan position, as determined by the waveform. If necessary, repeated measurements and waveform calculations can be made until the dose is uniform.

Abstract: The system processes one or more wafers from a FOUP to an ion processing chamber. A group of wafers from the FOUP is removed by a first end effector and loaded into a load lock through a lower door in an atmosphere opened position. The load lock is sealed, evacuated, and an upper door is opened to a vacuum opened position. A second end effector connected to a 3-axis robot moves one of the wafers from the load lock to the ion processing chamber. A wafer alignment robot can also be used. Wafers are sequentially processed from the load lock to the processing chamber until complete; and then the wafers within the load lock are sealed, pressurized, and moved back to the FOUP. A second load lock, and multiple FOUPs, are used to increase throughput.