Abstract: The present invention is directed, in general, to a method of polishing a surface on substrates, such as semiconductor wafers and, more specifically, to a polishing pad suitable for this purpose. The polishing pad comprises a polishing body that includes a cross-linked polymer material, and may be incorporated into a polishing apparatus. Polishing includes positioning the substrate containing at least one layer against the polishing body and polishing the layer.

Abstract: The present invention provides, chemical mechanical polishing pad with improved polishing properties and longevity for polishing semiconductor wafers. The polishing pad comprises a thermoplastic backing film and a pressure sensitive adhesive coupled to the thermoplastic backing film. The pressure sensitive adhesive is configured to couple a chemical mechanical polishing pad to a polishing platen. The pressure sensitive adhesive is further configured to provide an interface capable of substantially preventing delamination of the polishing pad from the polishing platen for at least about 4 days exposure to a polishing slurry medium having a pH of about 4 or higher.

Abstract: The present invention provides, chemical mechanical polishing pad with improved polishing properties and longevity for polishing semiconductor wafers. The polishing pad comprises a thermoplastic backing film and a pressure sensitive adhesive coupled to the thermoplastic backing film. The pressure sensitive adhesive is configured to couple a chemical mechanical polishing pad to a polishing platen. The pressure sensitive adhesive is further configured to provide an interface capable of substantially preventing delamination of the polishing pad from the polishing platen for at least about 4 days exposure to a polishing slurry medium having a pH of about 4 or higher.

Abstract: The present invention provides a slurry for chemical mechanical polishing (CMP) a metal surface of a semiconductor substrate with a polyurethane-free thermoplastic foam polishing body. The slurry includes an abrasive particle stabilizer and an acid buffer that maintains the slurry at a pH between about 2.5 and about 4.0 during polishing of a metal surface on a semiconductor substrate. In yet another embodiment, the present invention provides a CMP polishing system. The polishing system comprises a slurry that maintains a pH between about 1 and about 6 during polishing of a metal surface on a semiconductor substrate. The system further includes a polishing pad that includes a polishing body having a polyurethane-free thermoplastic foam substrate that cooperates with the slurry to remove portions of the metal surface during said polishing.

Abstract: The present invention provides a system and method for measuring the surface properties of polishing pads using non-contact ultrasonic reflectance. An ultrasonic probe is located over the polishing surface and configured to both transmit an ultrasonic signal to the polishing surface and receive a modified ultrasonic signal from the polishing surface without contacting the polishing surface. A subsystem coupled to the ultrasonic probe is configured to determine a surface property of the polishing pad from the modified signal.

Abstract: The present invention provides, polishing pad with improved polishing properties and longevity. The pad is comprised of a thermoplastic foam substrate having a surface comprised of concave cells. A polishing agent coats an interior surface of the concave cells. The invention includes a method for preparing the polishing pad, and a polishing apparatus comprising the polishing pad.

Abstract: The present invention provides a system and method for measuring the surface properties of polishing pads using noncontact ultrasonic reflectance. An ultrasonic probe is located over the polishing surface and configured to both transmit an ultrasonic signal to the polishing surface and receive a modified ultrasonic signal from the polishing surface without contacting the polishing surface. A subsystem coupled to the ultrasonic probe is configured to determine a surface property of the polishing pad from the modified signal.

Abstract: The present invention is directed, in general, to a method of planarizing a surface on a semiconductor wafer and, more specifically, to a method of altering the properties of polishing pads to improve thermal management during chemical-mechanical planarization, the resulting heat conductive pad and a polishing apparatus that includes the pad. The pad includes a polishing body composed of a thermoconductive polymer comprising an substrate and filler particle containing a Group II salt and within the substrate.