Abstract: A method of producing a solar cell, including: a first coating step in which a pre-wet composition is spin-coated on a surface of a semiconductor substrate; a second coating step in which a diffusing material including a solvent and a diffusing agent containing a first impurity element is spin-coated on the surface where the pre-wet composition has been spin-coated, so as to form a coating film of the diffusing agent; and a first impurity diffusion layer forming step in which the semiconductor substrate having the coating film formed thereon is heated, so as to form a first impurity diffusion layer in which the impurity element contained in the diffusing agent is diffused.

Abstract: [Problem] To provide a solar battery cell such that higher conversion efficiency than ever before is achieved and conversion efficiency of its front surface and conversion efficiency of its rear surface become almost equivalent in a double-sided light-receiving type solar battery cell. [Solution] There is provided a solar battery cell including: an n-type silicon substrate having a thickness of not less than 100 ?m nor more than 250 ?m; a p-type diffusion layer formed on a first light-receiving surface being a front surface of the silicon substrate; an n-type diffusion layer formed on a second light-receiving surface being a rear surface of the silicon substrate; an anti-reflection film formed on the p-type diffusion layer and the n-type diffusion layer; a plurality of grid electrodes and a plurality of busbar electrodes that are formed on part of the p-type diffusion layer; and a plurality of grid electrodes and a plurality of busbar electrodes that are formed on part of the n-type diffusion layer.

Abstract: [Problem] To provide a large solar battery cell capable of realizing sufficient conversion efficiency and a method of manufacturing the same. [Solution] There is provided a solar battery cell including: a p-type diffusion layer and an n-type diffusion layer formed on one surface and another surface of a silicon single crystal substrate; one electrode or more formed on part of the p-type diffusion layer; and one electrode or more formed on part of the n-type diffusion layer, wherein: a plurality of high-concentration p-type diffusion regions and low-concentration p-type diffusion regions each located between the high-concentration p-type diffusion regions are formed in the p-type diffusion layer; a plurality of high-concentration n-type diffusion regions and low-concentration n-type diffusion regions each located between the high-concentration n-type diffusion regions are formed in the n-type diffusion layer.