Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode with a low forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a first surface with a protection ring inside which is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky barrier. The height of the Schottky barrier is lower than the surface of the N? type doped drift layer, thereby reducing the thickness of the N? type doped drift layer under the Schottky barrier. This configuration reduces the forward voltage drop of the Schottky barrier.

Abstract: A Schottky diode with a lowered forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring inside which is a P-type doped layer. The surface of the N? type doped drift layer is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer within the P-type doped layer forms a Schottky barrier. An upward extending N type doped layer is formed on the N+ type doped layer and under the Schottky barrier to reduce the thickness of the N? type doped drift layer under the Schottky barrier. This lowers the forward voltage drop of the Schottky diode.

Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.