Abstract: The invention relates to an ATR spectrometer for analysing the chemical composition of a sample, wherein the ATR spectrometer (1) comprises an ATR crystal (2), at least one infrared light source (5) being arranged on the entry surface (3), a line array (6) of infrared light detectors, at least one single infrared light detector (7), wherein the at least one infrared light source (5) is adapted to emit infrared light that enters the ATR crystal and is guided to the infrared light detectors under total internal reflection and under interaction with the sample being arranged immediately adjacent to the ATR crystal, a wavelength dispersive element (8) being arranged in the path of the infrared light so—that the line array is adapted to measure a spectrum of the infrared light, and a wavelength filter (9) being arranged in the path of the infrared light to the single infrared light detector, wherein at least one of the infrared light detectors is chosen to be a chosen infrared light detector for a signal correctio

Abstract: A method for producing a micro system, said method comprising: providing a substrate (2) made of aluminum oxide; producing a thin film (6) on the substrate (2) by depositing lead zirconate titanate onto the substrate (2) with a thermal deposition method such that the lead zirconate titanate in the thin film (6) is self-polarized and is present predominantly in the rhombohedral phase; and cooling down the substrate (2) together with the thin film (6).

Abstract: A sensor system for detecting motion in a predefined direction of motion (30) of an infrared light source (29) has at least one pair of infrared light sensors (4, 5; 36, 37), which are arranged side by side with respect to the direction of motion (30) and, thus, define a sensor coverage zone (17) determined by the distance between distal ends (16) (with respect to the direction of motion) of the infrared light sensors. During exposure to the infrared light source, the sensors provide electrical signals, the charge signs of which are opposite each other, for detecting the motion of the infrared light source (29). The sensor system (1) has a window (7) positioned between the infrared light source (29) and the sensors such that the infrared light of the infrared light source (29) radiates onto the sensors.

Abstract: The invention relates to a method for producing the thin film made of lead zirconate titanate in a 111-oriented perovskite structure, comprising the following steps: providing a substrate having a substrate temperature above 450° C. and a lead target, a zirconium target, and a titanium target; applying the thin film by sputtering lead, zirconium, and titanium from the respective targets onto the substrate, wherein the total deposition rate of lead, zirconium, and titanium is greater than 10 nm/min, the deposition rate of zirconium is selected in such a way that the atomic concentration of zirconium with respect to the atomic concentration of zirconium together with titanium in the thin film is between 0.2 and 0.

Abstract: An infrared light detector including at least one sensor chip that has a layer element that is produced from a pyroelectrically sensitive material and further has a base electrode and a head electrode, to which the layer element is connected for tapping electric signals generated in the layer element by irradiation of the at least one sensor chip with light. The detector further includes a transimpedance amplifier for amplifying the signals with an operational amplifier, which is asymmetrically operated by a supply voltage source having a positive supply voltage and to the inverting input of which the base electrode is connected. At the voltage supply source, a voltage divider connected to ground is provided with a partial node, to which a partial voltage that is smaller than the supply voltage is applied and which is electrically coupled to the non-inverting input and to the head electrode.

Abstract: A method for producing an infrared light detector (1) has the steps of: providing a plurality of connection pins (11, 12), which are kept parallel to one another and arranged with one of the longitudinal ends (17, 18) thereof in a horizontal plane, and a printed circuit board (6) with a planar underside (8), in which a recess (15, 16) of the same form in each case is provided for each of the connection pins (11, 12); filling the recesses (15, 16) with a solder paste, so that in each of the recesses (15, 16) there is a solder paste body (21) with the same amount of solder paste; positioning the printed circuit board (6) over the connection pins (11, 12), so that each of the connection pins (11, 12) extends with its longitudinal end (17, 18) in the recess (15, 16) assigned to it and dips in the solder paste body (21) located in the respective recess (15, 16); liquefying the solder paste bodies (21), so that electrically conducting connections are formed between the connection pins (11, 12) and the solder paste

Abstract: The invention relates to an infrared light detector having a sensor chip (4), which comprises a thin-film element (5) made from a pyroelectrically sensitive material, having an electrical insulator (27), at least one electronic component (17, 18) having a thin-film design, which forms part of a readout electronics unit, and a thin-film membrane (2), on which the sensor chip (4) and the electronic component (17, 18) are mounted side by side in an integrated manner such that the electronic component (17, 18) is electrically conductively coupled to the thin-film element (5). A signal amplifier (22), with which, in co-operation with the electronic component (17, 18), an electrical signal emitted from the sensor chip (4) can be amplified, can be connected to the electronic component (17, 18).

Abstract: An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has