Patents Assigned to Q-Cells SE
  • Patent number: 9029690
    Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.
    Type: Grant
    Filed: May 31, 2011
    Date of Patent: May 12, 2015
    Assignee: Q-Cells SE
    Inventors: Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
  • Patent number: 8933525
    Abstract: The invention relates to a semiconductor apparatus and a method of fabrication for a semiconductor apparatus, whereby the semiconductor apparatus includes a semiconductor layer and a passivation layer arranged on a surface of the semiconductor layer and serving for passivating the semiconductor layer surface, whereby the passivation layer comprises a chemically passivating passivation sublayer and a field-effect-passivating passivation sublayer, which are arranged one above the other on the semiconductor layer surface.
    Type: Grant
    Filed: May 31, 2010
    Date of Patent: January 13, 2015
    Assignee: Q-Cells SE
    Inventors: Peter Engelhart, Robert Seguin, Wilhelmus Mathijs Marie Kessels, Gijs Dingemans
  • Patent number: 8679361
    Abstract: The invention relates to a method and device for characterizing wafers during the production of solar cells. Characterizing wafers includes a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on a lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating the charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d).
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: March 25, 2014
    Assignee: Q-Cells SE
    Inventors: Jörg Müller, Jörg Isenberg, Jörn Suthues, Martin Bivour, Jean Patrice Rakotoniaina
  • Patent number: 7943416
    Abstract: Disclosed is a novel method for creating local contacts in solar cells. In the method, a surface passivation that has been applied to a semiconductor substrate is locally etched away using a plasma process with the help of a thin stretched, elastic foil. If necessary, deep doping gradients are then locally created at the same points by means of a hydrogen plasma treatment with the help of thermal donors so as to increase the diffusion length of the charge carriers in the direction of the contacts. Finally, local heterostructure contacts are applied through the same mask openings. The contacts are characterized by a much lower saturation current than common diffused contacts and are therefore particularly suitable for high-performance solar cells.
    Type: Grant
    Filed: August 28, 2007
    Date of Patent: May 17, 2011
    Assignee: Q-Cells SE
    Inventors: Maximilian Scherff, Wolfgang Rainer Fahrner
  • Patent number: 7851696
    Abstract: The invention relates to a solar cell that comprises a planar semiconductor substrate with a front and a back; a multitude of holes that interconnect the front and the back; and current-collecting electrical contacts that are exclusively arranged on the back. The front comprises highly doped regions and lightly doped regions of a first type such that in each case the holes are situated in a highly doped region or adjoin such a region. According to a first aspect of the invention, the highly doped regions are arranged locally around the holes. According to a second aspect of the invention, the front comprises at least one region without holes, and the highly doped regions comprise one region or several regions that extends/extend to the at least one hole-free region. The invention furthermore relates to methods for manufacturing such solar cells.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: December 14, 2010
    Assignee: Q-Cells SE
    Inventors: Joerg Mueller, Robert Wade, Markus Hlusiak
  • Patent number: D664084
    Type: Grant
    Filed: May 9, 2011
    Date of Patent: July 24, 2012
    Assignee: Q-Cells SE
    Inventors: Björn Faulwetter-Quandt, Sven Wanka