Abstract: A light emitting device structure including a first light emitting element and a second light emitting element is provided. The first light emitting element includes a first anode and a first cathode. The second light emitting element is stacked on the first light emitting element and includes a second anode and a second cathode, wherein the second cathode is electrically connected to the first anode. An operation method of the light emitting device structure is also provided.

Abstract: A semiconductor structure includes a substrate, a first type semiconductor layer, a light-emitting stack layer, and a second type semiconductor layer. The first type semiconductor layer is disposed on the substrate. The light-emitting stack layer includes a plurality of light-emitting layers stacked on the first type semiconductor layer. The plurality of light-emitting layers are configured to emit different colors of light, and wavelengths of the different colors of light fall within a range of 200 nm to 2000 nm. The second type semiconductor layer is disposed on the light-emitting stack layer.

Abstract: A light emitting device structure including a first light emitting element and a second light emitting element is provided. The first light emitting element includes a first anode and a first cathode. The second light emitting element is stacked on the first light emitting element and includes a second anode and a second cathode, wherein the second cathode is electrically connected to the first anode. An operation method of the light emitting device structure is also provided.