Abstract: The present invention is related to a method for testing a micro-electronic device, by applying a plurality of test vectors to said device, and measuring for each test vector, the quiescent supply current IDDQ, to said device, wherein each IDDQ measured value is divided by another IDDQ value, and wherein the result of said division is compared to a predefined reference, resulting in a pass or fail decision for said device.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a method for testing a micro-electronic device, by applying a plurality of test vectors to said device, and measuring for each test vector, the quiescent supply current IDDQ, to said device, wherein each IDDQ measured value is divided by another IDDQ value, and wherein the result of said division is compared to a predefined reference, resulting in a pass or fail decision for said device.