Abstract: An image projection device includes: a light source emitting a light beam; an image input unit inputting image data; a control unit generating an image light beam based on the input image data, and controlling emission of the image light beam from the light source; a scan unit scanning the image light beam emitted from the light source; and a projection optical member illuminating a retina of an eyeball of a user with the image light beam scanned by the scan unit, and projecting an image onto the retina, wherein a diameter of the image light beam at a time when the image light beam enters a cornea of the eyeball is not smaller than 310 ?m and not larger than 800 ?m, and a user having an original visual acuity in a range of 0.04 to 1.2 has an acquired visual acuity of 0.4 or higher.

Abstract: The present invention is an image projection device that includes: a light source 12 that emits a laser beam 34; a scanning mirror 14 that two-dimensionally scans the laser beam 34 emitted from the light source 12; and a projection mirror 24 that projects scanned light onto a retina 26 of an eyeball 22 of a user to project an image onto the retina 26, the scanned light being composed of the laser beam 34 that has been scanned by the scanning mirror 14, wherein the laser beam 34 emitted from the light source 12 is scanned by using a part of an operating range of the scanning mirror 14.

Abstract: The present invention is an image projection device that includes: a light source 12 that emits a laser beam 34; a scanning mirror 14 that two-dimensionally scans the laser beam 34 emitted from the light source 12; and a projection mirror 24 that projects scanned light onto a retina 26 of an eyeball 22 of a user to project an image onto the retina 26, the scanned light being composed of the laser beam 34 that has been scanned by the scanning mirror 14, wherein the laser beam 34 emitted from the light source 12 is scanned by using a part of an operating range of the scanning mirror 14.

Abstract: The present invention provides a semiconductor laser including a first conductive type of a lower clad layer 12, an active layer 14 provided on the lower clad layer 12, the active layer 14 including a plurality of quantum dots, and a second conductive type of an upper clad layer 18, the upper clad layer 18 being provided on the active layer 14 so as to have an isolated ridge portion 30 such that W1?Wtop+0.4 ?m where Wtop is the width of a top of the ridge portion 30 and W1 is the width of the ridge portion 30 at a height of 50 nm from a bottom of the ridge portion 30. The present invention also provides a method for manufacturing such a semiconductor laser.