Abstract: Lithography mask or rewritable mask comprising at least one material with reversible changeable optical properties. Processes for manufacturing a mask, devices for processing a substrate, lithographic systems and semiconductor devices.

Abstract: A memory device comprising a memory cell and an evaluation circuit, the memory cell being coupled with the evaluation circuit via a bit line. The memory device further comprises a reference line coupled with the evaluation circuit, the evaluation circuit being designed for amplifying a difference between electric potentials of the bit line and the reference line. Inputs of the evaluation circuit are directly connected to the bit line. Outputs of the evaluation circuit are coupled to the bit line via a switch.

Abstract: An integrated circuit comprises a resistive memory cell, at least one reference cell, a first device configured to apply a predetermined read voltage to the resistive memory cell and a second device configured to apply the predetermined read voltage to the reference cell. The resistive memory cell can be switched between a highly resistive memory state and at least one lowly resistive memory state. The reference cell comprises a resistance value representing a reference state. The first device generates the read voltage for a first resistance range, the first resistance range comprising the memory states of the resistive memory cell. The second device generates the read voltage for a second resistance range, the second resistance range being smaller in comparison to the first resistance range and comprising the reference state of the reference cell.