Abstract: The present application relates to a full wafer nanoimprint lithography device comprises a wafer stage, a full wafer coated with a liquid resist, a demolding nozzle, a composite mold, an imprint head, a pressure passageway, a vacuum passageway and a UV light source. The present application also relates to an imprinting method using the full wafer nanoimprint lithography device comprises the following steps: 1) a pretreatment process; 2) an imprinting process; 3) a curing process; and 4) a demolding process. The device and the method can be used for high volume manufacturing photonic crystal LEDs, nano patterned sapphire substrates and the like in large scale patterning on the non-planar surface or substrate.

Abstract: A method for determining a seismic design for a structure includes setting performance objectives; inputting the performance objectives into a single degree of freedom system to carry out a simulation test; continuously adjusting the size of seismic waves applied to the system to determine a relationship between performance demand and the period of the structure under different performance objectives; obtaining a seismic demand spectrum curve between a seismic influence coefficient or a spectral accelation and displacement performance objective in the single degree of freedom system; analyzing the relationship between the base shear force and the displacement of the engineering structure; converting the relationship into the relationship between the capacity and the displacement in the single degree of freedom system; obtaining a capacity spectrum curve; comparing the capacity spectrum curve with the performance demand spectrum curve; and assessing the seismic capacity of the structure under different perform

Abstract: The present application relates to a full wafer nanoimprint lithography device comprises a wafer stage, a full wafer coated with a liquid resist, a demolding nozzle, a composite mold, an imprint head, a pressure passageway, a vacuum passageway and a UV light source. The present application also relates to an imprinting method using the full wafer nanoimprint lithography device comprises the following steps: 1) a pretreatment process; 2) an imprinting process; 3) a curing process; and 4) a demolding process. The device and the method can be used for high volume manufacturing photonic crystal LEDs, nano patterned sapphire substrates and the like in large scale patterning on the non-planar surface or substrate.