Patents Assigned to Qlvac, Inc.
  • Patent number: 6706155
    Abstract: In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.
    Type: Grant
    Filed: August 28, 2001
    Date of Patent: March 16, 2004
    Assignee: Qlvac, Inc.
    Inventors: Naoki Morimoto, Tomoyasu Kondo, Hideto Nagashima