Patents Assigned to QMC Co., Ltd.
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Patent number: 8993924Abstract: There is provided a target object processing method capable of self-breaking a target object with a laser beam. The target object processing method includes: generating a laser beam from a laser beam source; correcting a divergence angle of the generated laser beam; and forming a spot by condensing the corrected laser beam to the inside of the target object. A shape or a size of the spot is adjusted by correcting the divergence angle of the laser beam, a phase transformation area is formed within the target object by the spot, and the target object is subject to self-breaking with the phase transformation area as the starting point.Type: GrantFiled: April 29, 2011Date of Patent: March 31, 2015Assignees: QMC Co., Ltd., Beng So RyuInventors: Beng So Ryu, Byong Shik Lee, Hyeon Sam Jang, Bum Joong Kim
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Patent number: 8951889Abstract: There is provided a laser processing method of a sapphire substrate including preparing a sapphire substrate on which plural stacked portions spaced from each other are formed, irradiating a short pulse laser beam from a laser light source, making the laser beam irradiated from the laser light source pass through a beam shaping module, adjusting a position of a light concentrating unit or the sapphire substrate such that the laser beam is concentrated to the inside of the sapphire substrate through the light concentrating unit, and forming a phase transformation area within the sapphire substrate by irradiating the laser beam into the sapphire substrate. The laser beam is introduced into the sapphire substrate while avoiding an area where the stacked portions are formed on the sapphire substrate, so that the phase transformation area is formed within the sapphire substrate.Type: GrantFiled: April 15, 2011Date of Patent: February 10, 2015Assignees: QMC Co., Ltd., Beng So RyuInventors: Beng So Ryu, Byong Shik Lee, Hyeon Sam Jang, Bum Joong Kim
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Patent number: 8952717Abstract: The present invention provides an LED chip testing device that measures characteristics of an LED chip. The LED chip testing device includes: a rotation member that supports the LED chip and rotates the LED chip to a testing position where the characteristics of the LED chip are tested; and a tester installed next to the rotation member and serving to measure the characteristics of the LED chip at the testing position.Type: GrantFiled: December 24, 2009Date of Patent: February 10, 2015Assignee: QMC Co., Ltd.Inventor: Beng So Ryu
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Patent number: 8462331Abstract: The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.Type: GrantFiled: October 28, 2010Date of Patent: June 11, 2013Assignees: QMC Co., Ltd.Inventors: Beng So Ryu, Hong-Jin Jung, Byong-Shik Lee, Bum-Joong Kim, Hyeon-Sam Jang, Hark-Yong Kim, Jong-Ho Kwak, Young-Yong Kim, Sun-Young Hong
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Patent number: 8313961Abstract: An apparatus and method for manufacturing a light emitting devices by separating a semiconductor layer from a substrate includes a laser beam source for emitting a laser beam, a mesh-typed mask having a plurality of apertures through which the laser beam passes to provide a plurality of unit beams; and an imaging lens for forming a plurality of beam spots by focusing the plurality of unit beams at an interface between a substrate and a semiconductor layer to separate the substrate from the semiconductor layer.Type: GrantFiled: March 16, 2011Date of Patent: November 20, 2012Assignee: QMC Co., Ltd.Inventor: Beng So Ryu
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Publication number: 20120190174Abstract: There is provided a laser processing method of a sapphire substrate including preparing a sapphire substrate on which plural stacked portions spaced from each other are formed, irradiating a short pulse laser beam from a laser light source, making the laser beam irradiated from the laser light source pass through a beam shaping module, adjusting a position of a light concentrating unit or the sapphire substrate such that the laser beam is concentrated to the inside of the sapphire substrate through the light concentrating unit, and forming a phase transformation area within the sapphire substrate by irradiating the laser beam into the sapphire substrate. The laser beam is introduced into the sapphire substrate while avoiding an area where the stacked portions are formed on the sapphire substrate, so that the phase transformation area is formed within the sapphire substrate.Type: ApplicationFiled: April 15, 2011Publication date: July 26, 2012Applicants: QMC CO., LTD.Inventors: Beng So RYU, Byong Shik LEE, Hyeon Sam JANG, Bum Joong KIM
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Publication number: 20120111310Abstract: There is provided a target object processing method capable of self-breaking a target object with a laser beam. The target object processing method includes: generating a laser beam from a laser beam source; correcting a divergence angle of the generated laser beam; and forming a spot by condensing the corrected laser beam to the inside of the target object. A shape or a size of the spot is adjusted by correcting the divergence angle of the laser beam, a phase transformation area is formed within the target object by the spot, and the target object is subject to self-breaking with the phase transformation area as the starting point.Type: ApplicationFiled: April 29, 2011Publication date: May 10, 2012Applicants: QMC CO., LTD.Inventors: Beng So RYU, Byong Shik LEE, Hyeon Sam JANG, Bum Joong KIM
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Publication number: 20120043474Abstract: The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.Type: ApplicationFiled: October 28, 2010Publication date: February 23, 2012Applicants: QMC CO., LTD.Inventors: Beng So RYU, Hong-Jin JUNG, Byong-Shik LEE, Bum-Joong KIM, Hyeon-Sam JANG, Hark-Yong KIM, Jong-Ho KWAK, Young-Yong KIM, Sun-Young HONG
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Publication number: 20110316579Abstract: The present invention provides an LED chip testing device that measures characteristics of an LED chip. The LED chip testing device includes: a rotation member that supports the LED chip and rotates the LED chip to a testing position where the characteristics of the LED chip are tested; and a tester installed next to the rotation member and serving to measure the characteristics of the LED chip at the testing position.Type: ApplicationFiled: December 24, 2009Publication date: December 29, 2011Applicant: QMC Co., Ltd.Inventor: Beng So Ryu